Browsing by Author "Emir, C."

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Citation - WoS: 6
Citation - Scopus: 6
Analysis of the Structural and Optical Characteristics of Znse Thin Films as Interface Layer
(Springer, 2025) Emir, C.; Tataroglu, A.; Gökmen, U.; Ocak, S.B.; 01. Atılım University
This research reveals the results of a comprehensive analysis of the optical and structural features of zinc selenide (ZnSe) thin film. The studied film was synthesized using the thermal evaporation method after preparation on the glass substrate. The film’s structural characteristics, which have been determined by using scanning electron microscopy (SEM), energy dispersive X-ray (EDX), and X-ray diffraction (XRD), confirm the polycrystalline nature of the films with a predominant cubic zinc-blende structure. The surface morphology investigated through SEM reveals a uniform grain distribution with minimal surface defects, indicating high-quality film formation. In order to examine the optical characteristics, the ultraviolet–visible spectroscopy method is used in a spectral range between 300 and 900 nm. In this way, the ultraviolet–visible spectroscopy data are utilized to obtain optical features such as extinction coefficient (k), optical band gap (Eg), refractive index (n), absorption coefficient (α), and optical conductivity (σopt). These optical properties are assessed using ultraviolet–visible spectroscopy, revealing a direct band gap of approximately 2.88 eV, which is consistent with the bulk properties of ZnSe and suitable for optoelectronic applications. The results of this study clearly show that the studied ZnSe film can be used for optoelectronic device applications. © The Author(s) 2025.
Citation - WoS: 9
Citation - Scopus: 9
Effects of Si Nanowire on the Device Properties of N-znse/P-si Heterostructure
(Springer, 2019) Coskun, E.; Gullu, H. H.; Colakoglu, T.; Emir, C.; Bozdogan, E.; Parlak, M.; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
The semiconductor nanowire (NW) technology has raised attention owing to its one-dimensional geometry as a solution for lattice mismatch in the fabricated heterostructures. Although, SiNWs have been investigated for various device technologies, there is no published work on the p-n junction formed by deposition of ZnSe thin film on these NW structures, in which this film layer has significant optical and electrical properties in optoelectronics applications. The aim of this study is determining the device properties of n-ZnSe/SiNW heterojunction and obtaining the enhancement in the device application of the NW structure on Si surface with comparing to planar surface. SiNW was produced by metal assisted etching method as a cost-efficient process, and the ZnSe film was deposited on SiNW and planar Si substrates by thermal evaporation of elemental sources. The optical band gap of the deposited ZnSe film was determined as 2.7eV which is in a good agreement with literature. The ideality factor and series resistance values of the ZnSe/SiNW and ZnSe/Si heterojunctions were calculated as 3.12, 461 , and 4.52, 7.26x103, respectively. As a result of utilizing SiNW structure, a spectacular improvement in terms of the physical parameters related to device properties was achieved.
Citation - WoS: 5
Citation - Scopus: 5
Improvement of Electrical Characteristics of Snse/Si Heterostructure by Integration of Si Nanowires
(Elsevier, 2021) Coskun, E.; Gullu, H. H.; Emir, C.; Parlak, M.; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
In this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Omega, and 3.71, 1.57 x 10(3) Omega, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure.
Citation - WoS: 5
Citation - Scopus: 5
Structural and Optical Properties of Thermally Evaporated (gase)0.75-(gas)0.25 Thin Films
(Elsevier Gmbh, 2021) Isik, M.; Işık, Mehmet; Emir, C.; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering; 15. Graduate School of Natural and Applied Sciences; 01. Atılım University
GaSe and GaS binary semiconducting compounds are layered structured and have been an attractive research interest in two-dimensional material research area. The present paper aims at growing (GaSe)0.75 - (GaS)0.25 (or simply GaSe0.75S0.25) thin film and investigating its structural and optical properties. Thin films were prepared by thermal evaporation technique using evaporation source of its single crystal grown by Bridgman method. The structural properties were revealed using x-ray diffraction (XRD), energy dispersive spectroscopy (EDS), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. XRD pattern and EDS analyses indicated that thin films annealed at 300 ?C were successfully deposited and its structural characteristics are well-consistent with its single crystal form. Surface morphology was studied by means of SEM and AFM measurements. Optical properties were investigated by transmission and Raman spectroscopy techniques. Raman spectrum exhibited three peaks around 172, 242 and 342 cm-1. Analyses of transmission spectrum revealed the direct band gap energy as 2.34 eV. The mixed compounds of GaSe0.75S0.25 were prepared for the first time in a thin film form and the results of the present paper would provide valuable information to research area in which layered compounds have been studied in detail.