Thermoluminescence Characterization of (ga<sub>2</Sub>se<sub>3< - (ga<sub>2</Sub>s<sub>3< Single Crystal Compounds

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 55445682700
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Isik, M.
dc.contributor.author Guler, I
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:38:22Z
dc.date.available 2024-07-05T15:38:22Z
dc.date.issued 2020
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Guler, I] Cankaya Univ, Intercurricular Courses Dept, Phys, TR-06530 Ankara, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract Ga2Se3 and Ga2S3 compounds take attention due to their potential applications in photovoltaics. Defects and impurities may affect the quality of optoelectronic devices. Therefore, it is worthwhile to determine the parameters (activation energy, order of kinetics, frequency factor) of traps associated with the defects and/or impurities. The aim of the present paper is to investigate the trapping parameters of (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystal which is one of the member of (Ga2Se3)(x) - (Ga2S3)(1-x) mixed crystals. For this purpose, thermoluminescence (TL) experiments were performed on (Ga2Se3)(0.25) - (Ga2S3)(0.75) single crystals in the 10-300 K region. TL spectra were also recorded using various heating rates in between 0.2 and 1.0 K/s and stopping temperatures from 30 to 60 K to get the detailed information about the characteristics of the trapping parameters. TL glow curves exhibited the overlapped peaks. The stopping temperature experimental data indicated that traps present quasi-continuous distribution within the band gap. Initial rise method analyses were applied to get the activation energies of quasi-continuously distributed revealed traps. Thermal activation energies of distributed traps were found as increasing from 108 to 246 meV as stopping temperature was increased from 30 to 60 K. The structural characteristics (lattice constants and atomic compositions of constituent elements) of used compound were also reported in the present study. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1016/j.mssp.2019.104875
dc.identifier.issn 1369-8001
dc.identifier.issn 1873-4081
dc.identifier.scopus 2-s2.0-85076055710
dc.identifier.scopusquality Q1
dc.identifier.uri https://doi.org/10.1016/j.mssp.2019.104875
dc.identifier.uri https://hdl.handle.net/20.500.14411/3102
dc.identifier.volume 108 en_US
dc.identifier.wos WOS:000509742800032
dc.identifier.wosquality Q2
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier Sci Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 2
dc.subject Ga2S3 en_US
dc.subject Ga2Se3 en_US
dc.subject Thermoluminescence en_US
dc.subject Defects en_US
dc.title Thermoluminescence Characterization of (ga<sub>2</Sub>se<sub>3< - (ga<sub>2</Sub>s<sub>3< Single Crystal Compounds en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
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