Annealing effect on the low temperature thermoluminescence properties of GaSe single crystals

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Date

2014

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Elsevier Science Bv

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Trapping centers in as-grown GaSe single crystals have been investigated by thermoluminescence (TL) measurements in the temperature range of 30-300 K. The analysis of the observed peaks in TL glow curve to determine the activation energies of the associated centers were accomplished using curve fitting, initial rise and peak shape methods. Activation energies of the revealed four trapping centers obtained from various methods were in good agreement with each other on the energy values of 0.14, 0.18, 0.24 and 037 eV. The annealing effect on the TL properties of the GaSe single crystals was also studied for the annealing temperature of 500 degrees C. It was observed that annealing significantly decreased the U intensity and shifted the observed peaks to lower temperature resulting with smaller activation energy values. The distribution of the trapping centers with most intensive peak was also studied on both as-grown and annealed crystals. (C) 2014 Elsevier B.V. All rights reserved.

Description

Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;

Keywords

Semiconductors, Thermoluminescence, Defect, Annealing

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Citation

5

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Volume

154

Issue

Start Page

131

End Page

135

URI

https://doi.org/10.1016/j.jlumin.2014.04.010
 https://hdl.handle.net/20.500.14411/174

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