Determination of Carrier Effective Mass, Impurity Energy Levels, and Compensation Ratio in Ga<sub>4</Sub>se<sub>3< Layered Crystals by Hall Effect Measurements
No Thumbnail Available
Date
2008
Authors
Qasrawi, A. F.
Qasrawı, Atef Fayez Hasan
Gasanly, N. M.
Qasrawı, Atef Fayez Hasan
Qasrawı, Atef Fayez Hasan
Journal Title
Journal ISSN
Volume Title
Publisher
Wiley-v C H verlag Gmbh
Open Access Color
OpenAIRE Downloads
OpenAIRE Views
Abstract
In this work, the dark electrical resistivity, charge carriers density and Hall mobility of Ga4Se3S single crystals have been measured and analyzed in the temperature region of 200-350 K. The data analyses have shown that this crystal exhibits an extrinsic n-type of conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of energy level as 0.31 eV. The temperature dependence of carrier density was analyzed by using the single donor-single acceptor model. The latter analysis allowed the determination of electron effective mass as 0.38m(0), hole effective mass as 0.42m(0), donor impurity energy level as 0.45 eV, acceptor-donor concentration ratio (N-a/N-d) as 0.97 and a donor-acceptor concentration difference as N-d - N-a = 1.5 x 10(11) cm(-3). The Hall mobility of Ga4Se3S is found to increase with decreasing temperature following a power law of slope of similar to(-6.3). The abnormal behavior of mobility was attributed to the domination of phonon scattering and/or crystals anisotropy. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Description
Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975
Keywords
[No Keyword Available]
Turkish CoHE Thesis Center URL
Fields of Science
Citation
4
WoS Q
Q3
Scopus Q
Q3
Source
Volume
205
Issue
7
Start Page
1662
End Page
1665