Etectron-Phonon Short-Range Interactions Mobility and P- To N-Type Conversion in Tlgas<sub>2</Sub> Crystal

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, AF
dc.contributor.author Gasanly, NM
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:09:30Z
dc.date.available 2024-07-05T15:09:30Z
dc.date.issued 2006
dc.department Atılım University en_US
dc.department-temp Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The conductivity type conversion from p- to n-type at a critical temperature of 315 K in TlGaS2 crystals is observed through the Hall effect measurements in the temperature range of 200-350 K. The analysis of the temperature-dependent electrical resistivity, Hall coefficient and carrier concentration data reveals the extrinsic type of conduction with donor impurity levels that behave as acceptor levels when are empty. The data analysis allowed the calculation of hole and electron effective masses of 0.36m(0) and 0.23m(0), respectively. In addition, the temperature-dependent Hall mobility is found to decrease with temperature following a logarithmic slope of similar to 1.6. The Hall mobility in the n-region is limited by the electron-phonon short-range interactions scattering with an electron-phonon coupling constant of 0.21. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. en_US
dc.identifier.citationcount 25
dc.identifier.doi 10.1002/crat.200510551
dc.identifier.endpage 179 en_US
dc.identifier.issn 0232-1300
dc.identifier.issue 2 en_US
dc.identifier.scopus 2-s2.0-32644436707
dc.identifier.startpage 174 en_US
dc.identifier.uri https://doi.org/10.1002/crat.200510551
dc.identifier.uri https://hdl.handle.net/20.500.14411/1194
dc.identifier.volume 41 en_US
dc.identifier.wos WOS:000235444400011
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Wiley-v C H verlag Gmbh en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 26
dc.subject TIGaS2 en_US
dc.subject Hall effect en_US
dc.subject resistivity en_US
dc.subject mobility en_US
dc.subject coupling constant en_US
dc.subject phonon en_US
dc.subject scattering en_US
dc.title Etectron-Phonon Short-Range Interactions Mobility and P- To N-Type Conversion in Tlgas<sub>2</Sub> Crystal en_US
dc.type Article en_US
dc.wos.citedbyCount 26
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections