Optical characterization of Ga<sub>2</sub>SeS layered crystals by transmission, reflection and ellipsometry

No Thumbnail Available

Date

2015

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

World Scientific Publ Co Pte Ltd

Research Projects

Organizational Units

Thumbnail Image
Organizational Unit
Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Journal Issue

Abstract

Optical properties of Ga2SeS crystals grown by Bridgman method were investigated by transmission, reflection and ellipsometry measurements. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1100 nm at room temperature indicated the presence of indirect and direct transitions with 2.28 eV and 2.38 eV band gap energies. Ellipsometry measurements were carried out in the 1.2-6.0 eV spectral region to get information about optical constants, real and imaginary parts of the pseudodielectric function. Moreover, the critical point (CP) analysis of the second derivative spectra of the pseudodielectric constant in the above band gap region was accomplished. The analysis revealed the presence of five CPs with energies of 3.87, 4.16, 4.41, 4.67 and 5.34 eV.

Description

Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;

Keywords

Semiconductors, optical properties, ellipsometry, absorption

Turkish CoHE Thesis Center URL

Citation

3

WoS Q

Q2

Scopus Q

Source

Volume

29

Issue

18

Start Page

End Page

URI

https://doi.org/10.1142/S0217984915500888
 https://hdl.handle.net/20.500.14411/843

Collections

WOS
Scopus