Vibrational modes in (TlGaS<sub>2</sub>)<sub><i>x</i></sub>-(TlGaSe<sub>2</sub>)<sub>1-<i>x</i></sub>mixed crystals by Raman measurements: compositional dependence of the mode frequencies and line-shapes

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2020

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Springer

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

TlGaS(2)and TlGaSe(2)ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)(x)-(TlGaSe2)(1-x)layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80-400 cm(-1)for compositions ofx = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition.

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Babayeva, Rena Fikret/0000-0002-3170-0689; Gasanly, Nizami/0000-0002-3199-6686; Terlemezoglu, Makbule/0000-0001-7912-0176; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266

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6

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Volume

31

Issue

17

Start Page

14330

End Page

14335

URI

https://doi.org/10.1007/s10854-020-03990-8
 https://hdl.handle.net/20.500.14411/3072

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