Temperature- and Photo-Excitation Effects on the Electrical Properties of Tl<sub>4</Sub>se<sub>3< Crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:33:54Z
dc.date.available2024-07-05T14:33:54Z
dc.date.issued2009
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, W Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractThe extrinsic energy states and the recombination mechanism in the Tl4Se3S chain crystals are being investigated by means of electrical and photoelectrical measurements for the first time. The electrical resistivity is observed to decrease exponentially with increasing temperature. The analysis of this dependence revealed three impurity levels located at 280, 68 and 48 meV. The photocurrent is observed to increase as temperature decreases down to a minimum temperature T-m=200 K. Below this temperature the photocurrent decreases upon temperature lowering. Two photoconductivity activation energies of 10 and 100 meV were determined for the temperature ranges below and above T-m, respectively. The photocurrent (I-ph) versus illumination intensity (F) dependence follows the I-ph proportional to F-gamma law. The value of gamma decreases from similar to 1.0 at 300K to similar to 0.34 at 160K. The change in the value of gamma with temperature is attributed to the exchange of roles between the monomolecular recombination at the surface near room temperature and trapping centers in the crystal, which become dominant as temperature decreases.en_US
dc.identifier.citationcount8
dc.identifier.doi10.1088/0953-8984/21/11/115801
dc.identifier.issn0953-8984
dc.identifier.issn1361-648X
dc.identifier.issue11en_US
dc.identifier.pmid21693927
dc.identifier.scopus2-s2.0-65549128305
dc.identifier.urihttps://doi.org/10.1088/0953-8984/21/11/115801
dc.identifier.urihttps://hdl.handle.net/20.500.14411/987
dc.identifier.volume21en_US
dc.identifier.wosWOS:000263677300024
dc.identifier.wosqualityQ3
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount8
dc.subject[No Keyword Available]en_US
dc.titleTemperature- and Photo-Excitation Effects on the Electrical Properties of Tl<sub>4</Sub>se<sub>3< Crystalsen_US
dc.typeArticleen_US
dc.wos.citedbyCount8
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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