Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes

Gullu, H. H.; Yildiz, D. E.; Surucu, O. Bayrakli; Terlemezoglu, M.; Parlak, M.

Temperature dependence of electrical properties in In/Cu2ZnSnTe4/Si/Ag diodes

Date

2019

Authors

Publisher

indian Acad Sciences

Organizational Units

Organizational Unit

Electrical-Electronics Engineering

The Department of Electrical and Electronics Engineering covers communications, signal processing, high voltage, electrical machines, power distribution systems, radar and electronic warfare, RF, electromagnetic and photonics topics. Most of the theoretical courses in our department are supported by qualified laboratory facilities. Our department has been accredited by MÜDEK since 2013. Within the scope of joint training (COOP), in-company training opportunities are offered to our students. 9 different companies train our students for one semester within the scope of joint education and provide them with work experience. The number of students participating in joint education (COOP) is increasing every year. Our students successfully completed the joint education program that started in the 2019-2020 academic year and started work after graduation. Our department, which provides pre-graduation opportunities to its students with Erasmus, joint education (COOP) and undergraduate research projects, has made an agreement with Upper Austria University of Applied Sciences (Austria) starting from this year and offers its students undergraduate (Atılım University) and master's (Upper Austria) degrees with 3+2 education program. Our department, which has the only European Remote Radio Laboratory in Foundation Universities, has a pioneering position in research (publication, project, patent).

Organizational Unit

Department of Electrical & Electronics Engineering

Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Abstract

Cu2ZnSnTe4 (CZTTe) thin films with In metal contact were deposited by thermal evaporation on monocrystalline n-type Si wafers with Ag ohmic contact to investigate the device characteristics of an In/CZTTe/Si/Ag diode. The variation in electrical characteristics of the diode was analysed by carrying out current-voltage (I-V) measurements in the temperature range of 220-360 K. The forward bias I-V behaviour was modelled according to the thermionic emission (TE) theory to obtain main diode parameters. In addition, the experimental data were detailed by taking into account the presence of an interfacial layer and possible dominant current transport mechanisms were studied under analysis of ideality factor, n. Strong effects of temperature were observed on zero-bias barrier height (Phi(B0)) and n values due to barrier height inhomogeneity at the interface. The anomaly observed in the analysis of TE was modelled by Gaussian distribution (GD) of barrier heights with 0.844 eV mean barrier height and 0.132 V standard deviation. According to the Tung's theoretical approach, a linear correlation between Phi(B0) and n cannot be satisfied, and thus the modified Richardson plot was used to determine Richardson constant (A*). As a result, A* was calculated approximately as 120.6 A cm(-2) K-2 very close to the theoretical value for n-Si. In addition, the effects of series resistance (R-s) by estimating from Cheng's function and density of surface states (N-ss) by taking the bias dependence of effective barrier height, were discussed.

Description

Terlemezoglu, Makbule/0000-0001-7912-0176; SURUCU, Özge/0000-0002-8478-1267; Yıldız, Dilber Esra/0000-0003-2212-199X; parlak, mehmet/0000-0001-9542-5121