Temperature-Tuned Bandgap Characteristics of Bi<sub>12</Sub>tio<sub>20< Sillenite Single Crystals

dc.contributor.author Isik, M.
dc.contributor.author Delice, S.
dc.contributor.author Gasanly, N. M.
dc.contributor.author Darvishov, N. H.
dc.contributor.author Bagiev, V. E.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.contributor.other 15. Graduate School of Natural and Applied Sciences
dc.contributor.other 01. Atılım University
dc.date.accessioned 2024-07-05T15:39:15Z
dc.date.available 2024-07-05T15:39:15Z
dc.date.issued 2021
dc.description Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract Bi12MO20 (M: Si, Ge, Ti, etc.) compounds are known as sillenites having fascinating photorefractive characteristics. The present paper reports the structural and optical characteristics of one of the members of this family, Bi12TiO20 single crystals, grown by Czochralski method. X-ray diffraction pattern of the crystal presented sharp and intensive peaks associated with planes of cubic crystalline structure with lattice constant of a = 1.0142 nm. The optical properties were studied by means of room temperature Raman and temperature-dependent transmission experiments at various temperatures between 10 and 300 K. Raman spectrum indicated peaks around 127, 162, 191, 219, 261, 289, 321, 497 and 537 cm(-1). The analyses of transmittance spectra indicated the increase of direct bandgap energy from 2.30 to 2.56 eV as temperature was decreased from room temperature to 10 K. The temperature-dependent bandgap characteristics of Bi12TiO20 were analyzed by means of Varshni and O'Donnell-Chen models. The analyses under the light of these models resulted in absolute zero bandgap energy of E-g(0) = 2.56(4) eV, rate of change of bandgap energy of gamma = - 1.11 x 10(-3) eV/K and average phonon energy of < E-ph & rang; = 8.6 meV. en_US
dc.identifier.doi 10.1007/s10854-020-04904-4
dc.identifier.issn 0957-4522
dc.identifier.issn 1573-482X
dc.identifier.scopus 2-s2.0-85096598213
dc.identifier.uri https://doi.org/10.1007/s10854-020-04904-4
dc.identifier.uri https://hdl.handle.net/20.500.14411/3204
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.ispartof Journal of Materials Science: Materials in Electronics
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject [No Keyword Available] en_US
dc.title Temperature-Tuned Bandgap Characteristics of Bi<sub>12</Sub>tio<sub>20< Sillenite Single Crystals en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Delice, Serdar/0000-0001-5409-6528
gdc.author.id Gasanly, Nizami/0000-0002-3199-6686
gdc.author.id Isik, Mehmet/0000-0003-2119-8266
gdc.author.institutional Işık, Mehmet
gdc.author.scopusid 23766993100
gdc.author.scopusid 55751932500
gdc.author.scopusid 35580905900
gdc.author.scopusid 6508352480
gdc.author.scopusid 6602255913
gdc.author.wosid Isik, Mehmet/KMY-5305-2024
gdc.author.wosid Delice, Serdar/AAU-4793-2020
gdc.author.wosid Gasanly, Nizami/HRE-1447-2023
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gdc.coar.access metadata only access
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gdc.description.department Atılım University en_US
gdc.description.departmenttemp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Delice, S.] Hitit Univ, Dept Phys, TR-19040 Corum, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Darvishov, N. H.; Bagiev, V. E.] Baku State Univ, Inst Phys Problems, Baku 1148, Azerbaijan en_US
gdc.description.endpage 1322 en_US
gdc.description.issue 1 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.startpage 1316 en_US
gdc.description.volume 32 en_US
gdc.description.wosquality Q2
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gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
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