Temperature-Tuned Bandgap Characteristics of Bi<sub>12</Sub>tio<sub>20< Sillenite Single Crystals

dc.authoridDelice, Serdar/0000-0001-5409-6528
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authorscopusid23766993100
dc.authorscopusid55751932500
dc.authorscopusid35580905900
dc.authorscopusid6508352480
dc.authorscopusid6602255913
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidDelice, Serdar/AAU-4793-2020
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorIsik, M.
dc.contributor.authorIşık, Mehmet
dc.contributor.authorDelice, S.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorDarvishov, N. H.
dc.contributor.authorBagiev, V. E.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:39:15Z
dc.date.available2024-07-05T15:39:15Z
dc.date.issued2021
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Delice, S.] Hitit Univ, Dept Phys, TR-19040 Corum, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Darvishov, N. H.; Bagiev, V. E.] Baku State Univ, Inst Phys Problems, Baku 1148, Azerbaijanen_US
dc.descriptionDelice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266en_US
dc.description.abstractBi12MO20 (M: Si, Ge, Ti, etc.) compounds are known as sillenites having fascinating photorefractive characteristics. The present paper reports the structural and optical characteristics of one of the members of this family, Bi12TiO20 single crystals, grown by Czochralski method. X-ray diffraction pattern of the crystal presented sharp and intensive peaks associated with planes of cubic crystalline structure with lattice constant of a = 1.0142 nm. The optical properties were studied by means of room temperature Raman and temperature-dependent transmission experiments at various temperatures between 10 and 300 K. Raman spectrum indicated peaks around 127, 162, 191, 219, 261, 289, 321, 497 and 537 cm(-1). The analyses of transmittance spectra indicated the increase of direct bandgap energy from 2.30 to 2.56 eV as temperature was decreased from room temperature to 10 K. The temperature-dependent bandgap characteristics of Bi12TiO20 were analyzed by means of Varshni and O'Donnell-Chen models. The analyses under the light of these models resulted in absolute zero bandgap energy of E-g(0) = 2.56(4) eV, rate of change of bandgap energy of gamma = - 1.11 x 10(-3) eV/K and average phonon energy of < E-ph & rang; = 8.6 meV.en_US
dc.identifier.citation5
dc.identifier.doi10.1007/s10854-020-04904-4
dc.identifier.endpage1322en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85096598213
dc.identifier.startpage1316en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04904-4
dc.identifier.urihttps://hdl.handle.net/20.500.14411/3204
dc.identifier.volume32en_US
dc.identifier.wosWOS:000592613600005
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword Available]en_US
dc.titleTemperature-Tuned Bandgap Characteristics of Bi<sub>12</Sub>tio<sub>20< Sillenite Single Crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery0493a5b0-644f-4893-9f39-87538d8d6709
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