Temperature-Tuned Band Gap Properties of Mos<sub>2</Sub> Thin Films

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid parlak, mehmet/0000-0001-9542-5121
dc.authorid SURUCU, Özge/0000-0002-8478-1267
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Terlemezoglu, Makbule/0000-0001-7912-0176
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 57222350312
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorscopusid 57193666915
dc.authorscopusid 7003589218
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid parlak, mehmet/ABB-8651-2020
dc.authorwosid SURUCU, Özge/ABA-4839-2020
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Terlemezoglu, Makbule/ABA-5010-2020
dc.contributor.author Surucu, O.
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.author Terlemezoglu, M.
dc.contributor.author Parlak, M.
dc.contributor.other Electrical-Electronics Engineering
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:39:56Z
dc.date.available 2024-07-05T15:39:56Z
dc.date.issued 2020
dc.department Atılım University en_US
dc.department-temp [Surucu, O.; Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.; Terlemezoglu, M.; Parlak, M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan; [Terlemezoglu, M.] Tekirdag Namik Kemal Univ, Dept Phys, TR-59030 Tekirdag, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; parlak, mehmet/0000-0001-9542-5121; SURUCU, Özge/0000-0002-8478-1267; Gasanly, Nizami/0000-0002-3199-6686; Terlemezoglu, Makbule/0000-0001-7912-0176; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved. en_US
dc.identifier.citationcount 19
dc.identifier.doi 10.1016/j.matlet.2020.128080
dc.identifier.issn 0167-577X
dc.identifier.issn 1873-4979
dc.identifier.scopus 2-s2.0-85086383822
dc.identifier.scopusquality Q2
dc.identifier.uri https://doi.org/10.1016/j.matlet.2020.128080
dc.identifier.uri https://hdl.handle.net/20.500.14411/3263
dc.identifier.volume 275 en_US
dc.identifier.wos WOS:000548642000022
dc.identifier.wosquality Q2
dc.institutionauthor Sürücü, Özge
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 21
dc.subject MoS2 en_US
dc.subject Band gap energy en_US
dc.subject Optical properties en_US
dc.subject Temperature dependency en_US
dc.title Temperature-Tuned Band Gap Properties of Mos<sub>2</Sub> Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 21
dspace.entity.type Publication
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