Temperature-Tuned Band Gap Properties of Mos<sub>2</Sub> Thin Films
| dc.contributor.author | Surucu, O. | |
| dc.contributor.author | Isik, M. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.author | Terlemezoglu, M. | |
| dc.contributor.author | Parlak, M. | |
| dc.date.accessioned | 2024-07-05T15:39:56Z | |
| dc.date.available | 2024-07-05T15:39:56Z | |
| dc.date.issued | 2020 | |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; parlak, mehmet/0000-0001-9542-5121; SURUCU, Özge/0000-0002-8478-1267; Gasanly, Nizami/0000-0002-3199-6686; Terlemezoglu, Makbule/0000-0001-7912-0176; Isik, Mehmet/0000-0003-2119-8266 | en_US |
| dc.description.abstract | MoS2 is one of the fascinating members of transition metal dichalcogenides and has attracted great attention due to its various optoelectronic device applications and its characteristic as two-dimensional material. The present paper reports the structural and temperature tuned optical properties of MoS2 thin films grown by RF magnetron sputtering technique. It was observed that the atomic composition ratio of Mo:S was nearly equal to 1:2 and the deposited thin films have hexagonal crystalline structure exhibiting Raman peaks around 376 and 410 cm(-1). The band gap energies were determined as 1.66 and 1.71 eV at 300 and 10 K, respectively and temperature dependency of band gap energy was analyzed by means of Varshni and O'Donnell-Chen models. (C) 2020 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.matlet.2020.128080 | |
| dc.identifier.issn | 0167-577X | |
| dc.identifier.issn | 1873-4979 | |
| dc.identifier.scopus | 2-s2.0-85086383822 | |
| dc.identifier.uri | https://doi.org/10.1016/j.matlet.2020.128080 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/3263 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.relation.ispartof | Materials Letters | |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.subject | MoS2 | en_US |
| dc.subject | Band gap energy | en_US |
| dc.subject | Optical properties | en_US |
| dc.subject | Temperature dependency | en_US |
| dc.title | Temperature-Tuned Band Gap Properties of Mos<sub>2</Sub> Thin Films | en_US |
| dc.type | Article | en_US |
| dspace.entity.type | Publication | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | parlak, mehmet/0000-0001-9542-5121 | |
| gdc.author.id | SURUCU, Özge/0000-0002-8478-1267 | |
| gdc.author.id | Gasanly, Nizami/0000-0002-3199-6686 | |
| gdc.author.id | Terlemezoglu, Makbule/0000-0001-7912-0176 | |
| gdc.author.id | Isik, Mehmet/0000-0003-2119-8266 | |
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| gdc.author.wosid | Gasanly, Nizami/HRE-1447-2023 | |
| gdc.author.wosid | parlak, mehmet/ABB-8651-2020 | |
| gdc.author.wosid | SURUCU, Özge/ABA-4839-2020 | |
| gdc.author.wosid | Gasanly, Nizami/ABA-2249-2020 | |
| gdc.author.wosid | Isik, Mehmet/KMY-5305-2024 | |
| gdc.author.wosid | Terlemezoglu, Makbule/ABA-5010-2020 | |
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| gdc.description.department | Atılım University | en_US |
| gdc.description.departmenttemp | [Surucu, O.; Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.; Terlemezoglu, M.; Parlak, M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan; [Terlemezoglu, M.] Tekirdag Namik Kemal Univ, Dept Phys, TR-59030 Tekirdag, Turkey | en_US |
| gdc.description.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
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| gdc.description.startpage | 128080 | |
| gdc.description.volume | 275 | en_US |
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| gdc.virtual.author | Sürücü, Özge | |
| gdc.virtual.author | Işık, Mehmet | |
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