Post Annealing Effects on the Structural and Optical Properties of Moo<sub>3</Sub> Sandwiched With Indium Slabs

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2019

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Iop Publishing Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Molybdenum trioxide thin films are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar through insertion of indium slabs of thickness of 200 nm between layers of MoO3 and annealing the produced films in the air atmosphere at 250 degrees C for one hour. The films are studied by means of x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, and optical spectrophotometry techniques. The structure of the films is found to be composed monoclinic MoO3, tetragonal indium and cubic In2O3. The phase percentage of In2O3 in the films increased to 26.3% upon annealing at 250 degrees C. The annealing process increased the microstrain, the defect density, the oxygen atomic content and lowered the crystallites and grains sizes in the films. Optically, two energy band gaps of values of 3.20 and 1.70 eV were detected for the MoO3/In/MoO3 system. In addition, nonlinear dielectric response associated with wide range of tunability in the dielectric constant value, in the optical conductivity and in the terahertz cutoff frequency was observed in the near IR spectral range. The annealing of the samples improved the nonlinearity in these parameters and make MoO3/In/MoO3 system more appropriates for optoelectronic technology applications as terahertz cavities and frequency convertors.

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Qasrawi, Atef Fayez/0000-0001-8193-6975; Khanfar, Hazem k./0000-0002-3015-4049; Abusaa, Muayad/0000-0002-1443-1501

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MoO3-In2O3, x-ray, dielectric dispersion, optical conduction

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6

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11

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