Temperature Dependence of the Direct Allowed Transitions Band Gap and Optical Constants of Polycrystalline Α-in<sub>2</Sub>se<sub>3< Thin Films

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2006

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Elsevier Science Sa

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Polycrystalline alpha-In2Se3 thin films were obtained by the thermal evaporation of alpha-In2Se3 crystals onto glass substrates kept at temperature of 200 degrees C. The temperature dependence of the optical band gap in the temperature region of 300-480 K and the room temperature refractive index, it (lambda), of these films have been investigated. The absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to a direct allowed transitions energy gap that exhibits a temperature coefficient of -8.51 x 10(-4) (eV/K). The room temperature n(lambda) which was calculated from the transmittance data allowed the identification of the oscillator strength and energy, static dielectric constant and static refractive index as 20.7 and 2.15 eV, 10.70 and 3.26, respectively. (c) 2006 Elsevier B.V. All rights reserved.

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Qasrawi, Atef Fayez/0000-0001-8193-6975

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lattice parameter, optical properties, indium selenide

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Volume

514

Issue

1-2

Start Page

267

End Page

271

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