Physical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devices

dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid56766039000
dc.authorscopusid6603962677
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorQasrawi, A. F.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:32:15Z
dc.date.available2024-07-05T14:32:15Z
dc.date.issued2015
dc.departmentAtılım Universityen_US
dc.department-temp[Kmail, Renal R. N.; Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Palestinian Author, West Bank, Jenin, Iran; [Qasrawi, A. F.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkeyen_US
dc.descriptionQasrawi, Atef Fayez/0000-0001-8193-6975en_US
dc.description.abstractIn this work, the design and optical and electrical properties of MgO/GaSe heterojunction devices are reported and discussed. The device was designed using 0.4-mu m-thick n-type GaSe as substrate for a 1.6-mu m-thick p-type MgO optoelectronic window. The device was characterized by means of ultraviolet-visible optical spectrophotometry in the wavelength region from 200 nm to 1100 nm, current-voltage (I-V) characteristics, impedance spectroscopy in the range from 1.0 MHz to 1.8 GHz, and microwave amplitude spectroscopy in the frequency range from 1.0 MHz to 3.0 GHz. Optical analysis of the MgO/GaSe heterojunction revealed enhanced absorbing ability of the GaSe below 2.90 eV with an energy bandgap shift from 2.10 eV for the GaSe substrate to 1.90 eV for the heterojunction design. On the other hand, analysis of I-V characteristics revealed a tunneling-type device conducting current by electric field-assisted tunneling of charged particles through a barrier with height of 0.81 eV and depletion region width of 670 nm and 116 nm when forward and reverse biased, respectively. Very interesting features of the device are observed when subjected to alternating current (ac) signal analysis. In particular, the device exhibited resonance-antiresonance behavior and negative capacitance characteristics near 1.0 GHz. The device quality factor was similar to 10(2). In addition, when a small ac signal of Bluetooth amplitude (0.0 dBm) was imposed between the device terminals, the power spectra of the device displayed tunable band-stop filter characteristics with maximum notch frequency of 1.6 GHz. The energy bandgap discontinuity, the resonance-antiresonance behavior, the negative capacitance features, and the tunability of the electromagnetic power spectra at microwave frequencies nominate the Ag/MgO/GaSe/Al device as a promising optoelectronic device for use in multipurpose operations at microwave frequencies.en_US
dc.description.sponsorshipAAUJ research deanship; Scientific Research Council of the Ministry of Higher Education of the State of Palestine [2/1/2013]en_US
dc.description.sponsorshipThis research was funded by the AAUJ research deanship through the first cycle II of 2013/2014. The Scientific Research Council of the Ministry of Higher Education of the State of Palestine is also acknowledged for their support of the physics laboratories at the Arab American University through the project coded 2/1/2013.en_US
dc.identifier.citation8
dc.identifier.doi10.1007/s11664-015-3937-8
dc.identifier.endpage4198en_US
dc.identifier.issn0361-5235
dc.identifier.issn1543-186X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-84942832302
dc.identifier.startpage4191en_US
dc.identifier.urihttps://doi.org/10.1007/s11664-015-3937-8
dc.identifier.urihttps://hdl.handle.net/20.500.14411/779
dc.identifier.volume44en_US
dc.identifier.wosWOS:000361903000016
dc.identifier.wosqualityQ3
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOptical materialsen_US
dc.subjectheterojunctionen_US
dc.subjectimpedance spectroscopyen_US
dc.subjectmicrowaveen_US
dc.titlePhysical Design and Dynamical Analysis of Resonant-Antiresonant Ag/MgO/GaSe/Al Optoelectronic Microwave Devicesen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections