Electrical Conductivity and Hall Mobility in P-Type Tlgase<sub>2</Sub> Crystals

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dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidChen, Tianren/AAS-6018-2021
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawi, AF
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorGasanly, NM
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:08:41Z
dc.date.available2024-07-05T15:08:41Z
dc.date.issued2004
dc.departmentAtılım Universityen_US
dc.department-tempAtilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkeyen_US
dc.descriptionQasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractSystematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citationcount28
dc.identifier.doi10.1016/j.materresbull.2003.12.018
dc.identifier.endpage1359en_US
dc.identifier.issn0025-5408
dc.identifier.issue9en_US
dc.identifier.scopus2-s2.0-2942620901
dc.identifier.startpage1353en_US
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2003.12.018
dc.identifier.urihttps://hdl.handle.net/20.500.14411/1086
dc.identifier.volume39en_US
dc.identifier.wosWOS:000222362100020
dc.identifier.wosqualityQ2
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherPergamon-elsevier Science Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount10
dc.subjectsemiconductorsen_US
dc.subjectChalcogenidesen_US
dc.subjectlayered compoundsen_US
dc.subjectdefectsen_US
dc.subjectelectrical propertiesen_US
dc.titleElectrical Conductivity and Hall Mobility in P-Type Tlgase<sub>2</Sub> Crystalsen_US
dc.typeArticleen_US
dc.wos.citedbyCount28
dspace.entity.typePublication
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