Electrical Conductivity and Hall Mobility in P-Type Tlgase<sub>2</Sub> Crystals
| dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorscopusid | 6603962677 | |
| dc.authorscopusid | 35580905900 | |
| dc.authorwosid | Chen, Tianren/AAS-6018-2021 | |
| dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
| dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
| dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
| dc.contributor.author | Qasrawi, AF | |
| dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
| dc.contributor.author | Gasanly, NM | |
| dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.date.accessioned | 2024-07-05T15:08:41Z | |
| dc.date.available | 2024-07-05T15:08:41Z | |
| dc.date.issued | 2004 | |
| dc.department | Atılım University | en_US |
| dc.department-temp | Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
| dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 | en_US |
| dc.description.abstract | Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved. | en_US |
| dc.identifier.citationcount | 28 | |
| dc.identifier.doi | 10.1016/j.materresbull.2003.12.018 | |
| dc.identifier.endpage | 1359 | en_US |
| dc.identifier.issn | 0025-5408 | |
| dc.identifier.issue | 9 | en_US |
| dc.identifier.scopus | 2-s2.0-2942620901 | |
| dc.identifier.startpage | 1353 | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.materresbull.2003.12.018 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/1086 | |
| dc.identifier.volume | 39 | en_US |
| dc.identifier.wos | WOS:000222362100020 | |
| dc.identifier.wosquality | Q2 | |
| dc.institutionauthor | Qasrawı, Atef Fayez Hasan | |
| dc.language.iso | en | en_US |
| dc.publisher | Pergamon-elsevier Science Ltd | en_US |
| dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.scopus.citedbyCount | 10 | |
| dc.subject | semiconductors | en_US |
| dc.subject | Chalcogenides | en_US |
| dc.subject | layered compounds | en_US |
| dc.subject | defects | en_US |
| dc.subject | electrical properties | en_US |
| dc.title | Electrical Conductivity and Hall Mobility in P-Type Tlgase<sub>2</Sub> Crystals | en_US |
| dc.type | Article | en_US |
| dc.wos.citedbyCount | 28 | |
| dspace.entity.type | Publication | |
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