Mixed Conduction and Anisotropic Single Oscillator Parameters in Low Dimensional Tlinse<sub>2</Sub> Crystals

dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.date.accessioned 2024-07-05T14:28:23Z
dc.date.available 2024-07-05T14:28:23Z
dc.date.issued 2013
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract Due to the importance of the TlInSe2 crystal as neutron and gamma-ray detectors, its electrical and dispersive optical parameters have been investigated. Particularly, the anisotropic current conduction mechanism in the temperature region of 100-350 K and the room temperature anisotropic dispersive optical properties were studied by means of electrical conductivity and optical reflectance, respectively. It has been shown that the mixed conduction is the most dominant transport mechanism in the TlInSe2 crystals. Particularly, when the electric field is applied perpendicular to the crystal's c-axis, the main dominant current transport mechanism is due to the mixed conduction and the variable range hopping above and below 160 K, respectively. When the electric field is applied parallel to the crystal's c-axis, the electrical conductivity is dominated by the thermionic emission, mixed conduction and variable range hopping at high, moderate and low temperatures, respectively. The optical reflectivity analysis in the wavelength range 210-1500 nm revealed a clear anisotropy effect on the dispersive optical parameters. Particularly, the static refractive index, static dielectric constant, dispersion energy and oscillator energy exhibited values of 2.50, 6.24, 20.72 eV and 3.96 eV, and values of 3.05, 9.33, 39.27 eV and 4.72 eV for light propagation parallel and perpendicular to the crystal's c-axis, respectively. Moreover, the frequency dependence of the dielectric constant, epsilon(omega), reflected strong dielectric anisotropy that exhibit maximum epsilon(omega) value of 38.80 and 11.40 at frequencies of 11.07 x 10(14) Hz for light propagation parallel and perpendicular to the crystal's c-axis, respectively. The anisotropy in the epsilon(omega) makes the TlInSe2 crystals attractive to be used as nonvolatile static memory devices. (C) 2013 Elsevier B.V. All rights reserved. en_US
dc.identifier.doi 10.1016/j.matchemphys.2013.04.025
dc.identifier.issn 0254-0584
dc.identifier.scopus 2-s2.0-84879909031
dc.identifier.uri https://doi.org/10.1016/j.matchemphys.2013.04.025
dc.identifier.uri https://hdl.handle.net/20.500.14411/370
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.ispartof Materials Chemistry and Physics
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.subject Chalcogenides en_US
dc.subject Electrical characterization en_US
dc.subject Dielectric properties en_US
dc.subject Optical properties en_US
dc.title Mixed Conduction and Anisotropic Single Oscillator Parameters in Low Dimensional Tlinse<sub>2</Sub> Crystals en_US
dc.type Article en_US
dspace.entity.type Publication
gdc.author.id Qasrawi, Atef Fayez/0000-0001-8193-6975
gdc.author.id Gasanly, Nizami/0000-0002-3199-6686
gdc.author.id Gasanly, Nizami/0000-0002-3199-6686
gdc.author.scopusid 6603962677
gdc.author.scopusid 35580905900
gdc.author.wosid Qasrawi, Atef Fayez/R-4409-2019
gdc.author.wosid Gasanly, Nizami/ABA-2249-2020
gdc.author.wosid Gasanly, Nizami/HRE-1447-2023
gdc.bip.impulseclass C5
gdc.bip.influenceclass C5
gdc.bip.popularityclass C5
gdc.coar.access metadata only access
gdc.coar.type text::journal::journal article
gdc.collaboration.industrial false
gdc.description.department Atılım University en_US
gdc.description.departmenttemp [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
gdc.description.endpage 68 en_US
gdc.description.issue 1 en_US
gdc.description.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
gdc.description.startpage 63 en_US
gdc.description.volume 141 en_US
gdc.description.woscitationindex Science Citation Index Expanded
gdc.description.wosquality Q2
gdc.identifier.openalex W2084750239
gdc.identifier.wos WOS:000322149700011
gdc.index.type WoS
gdc.index.type Scopus
gdc.oaire.diamondjournal false
gdc.oaire.impulse 2.0
gdc.oaire.influence 2.666727E-9
gdc.oaire.isgreen false
gdc.oaire.popularity 2.1666833E-9
gdc.oaire.publicfunded false
gdc.oaire.sciencefields 0103 physical sciences
gdc.oaire.sciencefields 02 engineering and technology
gdc.oaire.sciencefields 0210 nano-technology
gdc.oaire.sciencefields 01 natural sciences
gdc.openalex.collaboration International
gdc.openalex.fwci 0.3064
gdc.openalex.normalizedpercentile 0.58
gdc.opencitations.count 4
gdc.plumx.crossrefcites 2
gdc.plumx.mendeley 7
gdc.plumx.scopuscites 4
gdc.scopus.citedcount 4
gdc.virtual.author Qasrawı, Atef Fayez Hasan
gdc.wos.citedcount 4
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication dff2e5a6-d02d-4bef-8b9e-efebe3919b10
relation.isOrgUnitOfPublication 50be38c5-40c4-4d5f-b8e6-463e9514c6dd
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections