Low-Temperature Thermoluminescence in Layered Structured Ga<sub>0.75</Sub>in<sub>0.25< Single Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Bulur, Enver/0000-0002-4000-7966
dc.authorscopusid 23766993100
dc.authorscopusid 7003860352
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Isik, Mehmet/KMY-5305-2024
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Bulur, Enver/J-6320-2013
dc.contributor.author Isik, M.
dc.contributor.author Bulur, E.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:28:20Z
dc.date.available 2024-07-05T14:28:20Z
dc.date.issued 2012
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Bulur, E.; Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Bulur, Enver/0000-0002-4000-7966 en_US
dc.description.abstract Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels. (C) 2012 Elsevier B.V. All rights reserved. en_US
dc.identifier.citationcount 4
dc.identifier.doi 10.1016/j.jallcom.2012.08.015
dc.identifier.endpage 156 en_US
dc.identifier.issn 0925-8388
dc.identifier.scopus 2-s2.0-84866133045
dc.identifier.startpage 153 en_US
dc.identifier.uri https://doi.org/10.1016/j.jallcom.2012.08.015
dc.identifier.uri https://hdl.handle.net/20.500.14411/350
dc.identifier.volume 545 en_US
dc.identifier.wos WOS:000310818700027
dc.identifier.wosquality Q1
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 5
dc.subject Semiconductors en_US
dc.subject Thermoluminescence en_US
dc.subject Defects en_US
dc.title Low-Temperature Thermoluminescence in Layered Structured Ga<sub>0.75</Sub>in<sub>0.25< Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 5
dspace.entity.type Publication
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relation.isAuthorOfPublication.latestForDiscovery 0493a5b0-644f-4893-9f39-87538d8d6709
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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