Forward and reverse bias current-voltage characteristics of Au/n-Si Schottky barrier diodes with and without SnO<sub>2</sub> insulator layer

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Date

2011

Authors

Aydemir, Ümran
Altindal, S.
Karaman, Mehmet
Aydemir, U.

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Elsevier

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Chemical Engineering
(2010)
Established in 2010, and aiming to train the students with the capacity to meet the demands of the 21st Century, the Chemical Engineering Department provides a sound chemistry background through intense coursework and laboratory practices, along with fundamental courses such as Physics and Mathematics within the freshman and sophomore years, following preparatory English courses.In the final two years of the program, engineering courses are offered with laboratory practice and state-of-the-art simulation programs, combining theory with practice.
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Physics Group
Atılım University Physics Division was established with the purpose of educating the first-year students of the Engineering and other Departments by providing the general physics courses and, in addition, to make scientific and technological researches at the universal level. Now adays, Physics Division provide the students of Engineering, School of Aviation and Mathematics Departments with the general physics lectures having international education quality. We have in the Group the facilities of the mechanics and electricity laboratories, where the students have the opportunity to realize the practice of the theoretical knowledge in physics. Beside the compulsory courses (General Physics I and General Physics II) there are also elective courses offered by the Group. The faculty members in the Group, whose research interests and fields are given in web-page of the Group in details, perform theoretical as well as experimental researches and make publications in SSC-index journals. Graduate program, with master of sciences and doctorate degree courses and theses, is offered in different scientific areas (for details, see the web-page of the Division). In the Physcis Division there are 6 faculty members, five research assistants, and one technician.

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Abstract

The effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(Bo)) were calculated from ln(I) vs. V plots and Cheung methods. The energy density distribution profile of the interface states was obtained from the forward bias I-V data by taking bias dependence of ideality factor, effective barrier height (Phi(e)) and R-s into account for MS and MIS SBDs. It was found that N-ss values increase from at about mid-gap energy of Si to bottom of conductance band edge of both SBDs and the MIS SBD's N-ss values are 5-10 times lower than those of MS SBD's. An apparent exponential increase from the mid-gap towards the bottom of conductance band is observed for both SBDs' (MS and MIS) interface states obtained without taking R-s into account. (C) 2011 Elsevier B.V. All rights reserved.

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Aydemir, Umut/0000-0001-5396-4610; Aydemir, Umut/0000-0001-5396-4610; Gökçen, Muharrem/0000-0001-9063-3028

Keywords

Au/n-Si, Insulator layer effects, Series resistance, I-V characteristic, Interface states

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Citation

47

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Volume

406

Issue

21

Start Page

4119

End Page

4123

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