Space-charge-limited currents and photoconductive properties of Tl<sub>2</sub>InGaSe<sub>4</sub> layered crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:33:19Z
dc.date.available 2024-07-05T14:33:19Z
dc.date.issued 2008
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The extrinsic electronic parameters of Tl2InGaSe4 layered crystals were investigated through measurement of the temperature-dependent dark conductivity, space-charge-limited currents and photoconductivity. Analysis of the dark conductivity reveals the existence of two extrinsic energy levels at 0.40 and 0.51 eV below the conduction band edge, which are dominant above and below 260 K, respectively. Current-voltage characteristics show that the one at 0.51 eV is a trapping energy level with a concentration of (4.8-7.7) x 10(10) cm(3). Photoconductivity measurements reveal the existence of another energy level located at 0.16 eV. In the studied temperature range, the photocurrent increases with increasing temperature. The dependence of the photoconductivity on the incident light intensity exhibits a linear recombination character near room temperature and a supralinear character as the temperature decreases. The change in recombination mechanism is attributed to an exchange in the behavior of sensitizing and recombination centres. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1080/14786430802382267
dc.identifier.endpage 2906 en_US
dc.identifier.issn 1478-6435
dc.identifier.issue 22 en_US
dc.identifier.scopus 2-s2.0-65249083421
dc.identifier.scopusquality Q3
dc.identifier.startpage 2899 en_US
dc.identifier.uri https://doi.org/10.1080/14786430802382267
dc.identifier.uri https://hdl.handle.net/20.500.14411/918
dc.identifier.volume 88 en_US
dc.identifier.wos WOS:000261172700001
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Taylor & Francis Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 2
dc.subject layered crystals en_US
dc.subject electrical properties en_US
dc.subject photoelectrical properties en_US
dc.subject electronic transport en_US
dc.title Space-charge-limited currents and photoconductive properties of Tl<sub>2</sub>InGaSe<sub>4</sub> layered crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
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relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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