Analysis of Forward and Reverse Biased Current-Voltage Characteristics of Al/Al<sub>2< Schottky Diode With Atomic Layer Deposited Al<sub>2</Sub>o<sub>3< Thin Film Interlayer

dc.authorid Yıldız, Dilber Esra/0000-0003-2212-199X
dc.authorscopusid 36766075800
dc.authorscopusid 16023635100
dc.authorwosid GULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosid Yıldız, Dilber Esra/AAB-6411-2020
dc.contributor.author Gullu, H. H.
dc.contributor.author Yildiz, D. E.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:41:41Z
dc.date.available 2024-07-05T15:41:41Z
dc.date.issued 2019
dc.department Atılım University en_US
dc.department-temp [Gullu, H. H.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Yildiz, D. E.] Hitit Univ, Dept Phys, TR-19030 Corum, Turkey en_US
dc.description Yıldız, Dilber Esra/0000-0003-2212-199X en_US
dc.description.abstract The dark current-voltage (I-V) characteristics of Al/Al2O3/n-Si Schottky diode are investigated in a wide temperature range of 260-360 K. The diode shows four orders of magnitude rectification. In forward and reverse bias regions, the temperature-dependent I-Vcharacteristics are detailed in terms of diode parameters and dominant conduction mechanisms. Due to the existence of Al2O3 film layer and series resistance in the diode structure, current flow under the forward bias is observed in a deviation from pure exponential characteristics. The diode parameters are estimated from thermionic emission model with non-unity ideality factor, and this non-ideal behavior is resulted in the ideality factors greater than two. In addition to these values, zero-bias barrier height is found to be strongly temperature dependent, and this variation indicates a presence of inhomogeneties in the barrier according to Gaussian distribution (GD) approximation. This fact is investigated plotting characteristic plot of this model and by extracting mean barrier height with its standard deviation. In order to complete the work on the forward I-V region, the carrier transport characteristics of the diode are explained on the basis of thermionic emission mechanism with a GD of the harrier heights. In accordance with this approximation, the conventional Richardson plot exhibits non-linearity behavior and modified current relation based on GD model is used to calculate mean barrier height and Richardson constant. In addition, the values of parasitic resistances are determined using Ohm's law as a function of temperature for all bias voltage spectra. In the reverse bias region, Poole-Frenkel effect is found to be dominant on the conduction associated with the barrier lowering, and barrier height in the emission process from the trapped states, and high-frequency dielectric constant of Al2O3 film layer is calculated. en_US
dc.identifier.citationcount 32
dc.identifier.doi 10.1007/s10854-019-02300-1
dc.identifier.endpage 19393 en_US
dc.identifier.issn 0957-4522
dc.identifier.issn 1573-482X
dc.identifier.issue 21 en_US
dc.identifier.scopus 2-s2.0-85073977589
dc.identifier.startpage 19383 en_US
dc.identifier.uri https://doi.org/10.1007/s10854-019-02300-1
dc.identifier.uri https://hdl.handle.net/20.500.14411/3481
dc.identifier.volume 30 en_US
dc.identifier.wos WOS:000489545600001
dc.identifier.wosquality Q2
dc.institutionauthor Güllü, Hasan Hüseyin
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 36
dc.subject [No Keyword Available] en_US
dc.title Analysis of Forward and Reverse Biased Current-Voltage Characteristics of Al/Al<sub>2< Schottky Diode With Atomic Layer Deposited Al<sub>2</Sub>o<sub>3< Thin Film Interlayer en_US
dc.type Article en_US
dc.wos.citedbyCount 37
dspace.entity.type Publication
relation.isAuthorOfPublication d69999a1-fdfb-496f-8b4e-a9fa9b68b35a
relation.isAuthorOfPublication.latestForDiscovery d69999a1-fdfb-496f-8b4e-a9fa9b68b35a
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections