Heat Treatment Effects on the Structural and Electrical Properties of Thermally Deposited Agin<sub>5</Sub>s<sub>8< Thin Films

dc.authorid Ercan, filiz/0000-0002-3533-0726
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Kayed, Tarek/0000-0003-3482-4166
dc.authorscopusid 6603962677
dc.authorscopusid 6602167805
dc.authorscopusid 56235566900
dc.authorwosid Ercan, filiz/AAG-7962-2019
dc.authorwosid ERCAN, FİLİZ/G-6063-2013
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Kayed, Tarek/A-5842-2015
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Kayed, T. S.
dc.contributor.author Ercan, Filiz
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:10:30Z
dc.date.available 2024-07-05T15:10:30Z
dc.date.issued 2011
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.; Kayed, T. S.] Atilim Univ, Fac Engn, Phys Grp, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Kayed, T. S.] Univ Dammam, Coll Engn, Dammam 31441, Saudi Arabia; [Ercan, Filiz] Hacettepe Univ, Dept Engn Phys, TR-06800 Ankara, Turkey en_US
dc.description Ercan, filiz/0000-0002-3533-0726; Qasrawi, Atef Fayez/0000-0001-8193-6975; Kayed, Tarek/0000-0003-3482-4166 en_US
dc.description.abstract The heat treatment effects on structural and electrical properties of thermally deposited AgIn5S8 thin films have been investigated. By increasing the annealing temperature of the sample from 450 to 500 K, we observed a change in the crystallization direction from (420) to (311). Further annealing of the AgIn5S8 films at 550, 600 and 650 K resulted in larger grain size in the (311) preferred direction. The room temperature electrical resistivity, Hall coefficient and Hall mobility were significantly influenced by higher annealing temperatures. Three impurity levels at 230, 150, and 78 meV were detected for samples annealed at 350 K. The electrical resistivity decreased by four orders of magnitude when the sample annealing temperature was raised from 350 to 450 K. The temperature dependent electrical resistivity and carrier concentration of the thin film samples were studied in the temperature ranges of 25-300 K and 140-300 K, respectively. A degenerate-nondegenerate semiconductor transition at approximately 180 was observed for samples annealed at 450 and 500 K. Similar type of transition was observed at 240 K for samples annealed at 600 and 650 K. (C) 2011 Elsevier Ltd. All rights reserved. en_US
dc.identifier.citationcount 17
dc.identifier.doi 10.1016/j.ssc.2011.02.001
dc.identifier.endpage 618 en_US
dc.identifier.issn 0038-1098
dc.identifier.issn 1879-2766
dc.identifier.issue 8 en_US
dc.identifier.scopus 2-s2.0-79952536792
dc.identifier.startpage 615 en_US
dc.identifier.uri https://doi.org/10.1016/j.ssc.2011.02.001
dc.identifier.uri https://hdl.handle.net/20.500.14411/1329
dc.identifier.volume 151 en_US
dc.identifier.wos WOS:000289584800008
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.institutionauthor Kayed, Tarek Said
dc.language.iso en en_US
dc.publisher Pergamon-elsevier Science Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 18
dc.subject Thin films en_US
dc.subject Crystal growth en_US
dc.subject Grain boundaries en_US
dc.subject Electronic transport en_US
dc.title Heat Treatment Effects on the Structural and Electrical Properties of Thermally Deposited Agin<sub>5</Sub>s<sub>8< Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 18
dspace.entity.type Publication
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