Dielectric Dispersion in Ga<sub>2</sub>S<sub>3</sub> Thin Films
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorscopusid | 55735276400 | |
dc.authorscopusid | 6603962677 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.authorwosid | Alharbi, Seham/JFK-4290-2023 | |
dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
dc.contributor.author | Qasrawi, A. F. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:29:05Z | |
dc.date.available | 2024-07-05T15:29:05Z | |
dc.date.issued | 2017 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Alharbi, S. R.] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Qasrawi, A. F.] Atilim Univ, AAUJ, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey | en_US |
dc.description | Qasrawi, Atef Fayez/0000-0001-8193-6975; | en_US |
dc.description.abstract | In this work, the structural, compositional, optical, and dielectric properties of Ga2S3 thin films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, and ultraviolet-visible light spectrophotometry. The Ga2S3 thin films which exhibited amorphous nature in its as grown form are observed to be generally composed of 40.7 % Ga and 59.3 % S atomic content. The direct allowed transitions optical energy bandgap is found to be 2.96 eV. On the other hand, the modeling of the dielectric spectra in the frequency range of 270-1,000 THz, using the modified Drude-Lorentz model for electron-plasmon interactions revealed the electrons scattering time as 1.8 (fs), the electron bounded plasma frequency as similar to 0.76-0.94 (GHz) and the reduced resonant frequency as 2.20-4.60 x10(15) (Hz) in the range of 270-753 THz. The corresponding drift mobility of electrons to the terahertz oscillating incident electric field is found to be 7.91 (cm (2)/Vs). The values are promising as they nominate the Ga2S3 thin films as effective candidates in thin-film transistor and gas sensing technologies. | en_US |
dc.description.sponsorship | Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah [G-236-363-37]; DSR | en_US |
dc.description.sponsorship | This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah, under the grant number G-236-363-37. The authors, therefore, acknowledge with thanks the DSR technical and financial support. | en_US |
dc.identifier.citation | 15 | |
dc.identifier.doi | 10.1007/s11468-016-0357-4 | |
dc.identifier.endpage | 1049 | en_US |
dc.identifier.issn | 1557-1955 | |
dc.identifier.issn | 1557-1963 | |
dc.identifier.issue | 4 | en_US |
dc.identifier.scopus | 2-s2.0-84982293300 | |
dc.identifier.scopusquality | Q2 | |
dc.identifier.startpage | 1045 | en_US |
dc.identifier.uri | https://doi.org/10.1007/s11468-016-0357-4 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/2852 | |
dc.identifier.volume | 12 | en_US |
dc.identifier.wos | WOS:000405528900013 | |
dc.identifier.wosquality | Q3 | |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Gallium sulfide | en_US |
dc.subject | Optical materials | en_US |
dc.subject | Coating | en_US |
dc.subject | Dielectric properties | en_US |
dc.subject | Plasmon | en_US |
dc.title | Dielectric Dispersion in Ga<sub>2</sub>S<sub>3</sub> Thin Films | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
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