Dielectric Dispersion in Ga<sub>2</Sub>s<sub>3< Thin Films

dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 55735276400
dc.authorscopusid 6603962677
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Alharbi, Seham/JFK-4290-2023
dc.contributor.author Alharbi, S. R.
dc.contributor.author Qasrawi, A. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:29:05Z
dc.date.available 2024-07-05T15:29:05Z
dc.date.issued 2017
dc.department Atılım University en_US
dc.department-temp [Alharbi, S. R.] King Abdulaziz Univ, Fac Sci Al Faisaliah, Dept Phys, Jeddah, Saudi Arabia; [Qasrawi, A. F.] Atilim Univ, AAUJ, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey en_US
dc.description Qasrawi, Atef Fayez/0000-0001-8193-6975; en_US
dc.description.abstract In this work, the structural, compositional, optical, and dielectric properties of Ga2S3 thin films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray analysis, and ultraviolet-visible light spectrophotometry. The Ga2S3 thin films which exhibited amorphous nature in its as grown form are observed to be generally composed of 40.7 % Ga and 59.3 % S atomic content. The direct allowed transitions optical energy bandgap is found to be 2.96 eV. On the other hand, the modeling of the dielectric spectra in the frequency range of 270-1,000 THz, using the modified Drude-Lorentz model for electron-plasmon interactions revealed the electrons scattering time as 1.8 (fs), the electron bounded plasma frequency as similar to 0.76-0.94 (GHz) and the reduced resonant frequency as 2.20-4.60 x10(15) (Hz) in the range of 270-753 THz. The corresponding drift mobility of electrons to the terahertz oscillating incident electric field is found to be 7.91 (cm (2)/Vs). The values are promising as they nominate the Ga2S3 thin films as effective candidates in thin-film transistor and gas sensing technologies. en_US
dc.description.sponsorship Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah [G-236-363-37]; DSR en_US
dc.description.sponsorship This project was funded by the Deanship of Scientific Research (DSR), King Abdulaziz University, Jaddah, under the grant number G-236-363-37. The authors, therefore, acknowledge with thanks the DSR technical and financial support. en_US
dc.identifier.citationcount 15
dc.identifier.doi 10.1007/s11468-016-0357-4
dc.identifier.endpage 1049 en_US
dc.identifier.issn 1557-1955
dc.identifier.issn 1557-1963
dc.identifier.issue 4 en_US
dc.identifier.scopus 2-s2.0-84982293300
dc.identifier.scopusquality Q2
dc.identifier.startpage 1045 en_US
dc.identifier.uri https://doi.org/10.1007/s11468-016-0357-4
dc.identifier.uri https://hdl.handle.net/20.500.14411/2852
dc.identifier.volume 12 en_US
dc.identifier.wos WOS:000405528900013
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Springer en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 17
dc.subject Gallium sulfide en_US
dc.subject Optical materials en_US
dc.subject Coating en_US
dc.subject Dielectric properties en_US
dc.subject Plasmon en_US
dc.title Dielectric Dispersion in Ga<sub>2</Sub>s<sub>3< Thin Films en_US
dc.type Article en_US
dc.wos.citedbyCount 15
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

Files

Collections