Acoustic Phonons Scattering Mobility and Carrier Effective Mass in In<sub>6</Sub>s<sub>7< Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:33:32Z
dc.date.available 2024-07-05T14:33:32Z
dc.date.issued 2006
dc.department Atılım University en_US
dc.department-temp Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract Systematic dark electrical resistivity and Hall coefficient measurements have been carried out in the temperature range of 170-320 K on n-type In6S7 crystals. The analysis of the electrical resistivity and carrier concentration reveals the intrinsic type of conduction with an average energy band gap of similar to 0.75 eV The carrier effective masses of the conduction and valence bands were calculated from the intrinsic temperature-dependent carrier concentration data and were found to be 0.565m(0) and 2.020m(0), respectively. The temperature-dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analyzed assuming the domination of acoustic phonons scattering. The acoustic phonons scattering mobility was calculated from the crystal's structural data with no assumptions. The experimental Hall mobility data of In6S7 crystals coincides with the theoretical acoustic phonons scattering mobility data with acoustic deformation potential of 6.4 eV. (c) 2006 Elsevier B.V. All rights reserved. en_US
dc.identifier.citationcount 5
dc.identifier.doi 10.1016/j.jallcom.2006.02.037
dc.identifier.endpage 66 en_US
dc.identifier.issn 0925-8388
dc.identifier.issue 1-2 en_US
dc.identifier.scopus 2-s2.0-33751017962
dc.identifier.startpage 64 en_US
dc.identifier.uri https://doi.org/10.1016/j.jallcom.2006.02.037
dc.identifier.uri https://hdl.handle.net/20.500.14411/943
dc.identifier.volume 426 en_US
dc.identifier.wos WOS:000243085600012
dc.identifier.wosquality Q1
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Elsevier Science Sa en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 5
dc.subject semiconductors en_US
dc.subject crystal growth en_US
dc.subject X-ray diffraction en_US
dc.subject electronic transport en_US
dc.title Acoustic Phonons Scattering Mobility and Carrier Effective Mass in In<sub>6</Sub>s<sub>7< Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 5
dspace.entity.type Publication
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relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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