Optical properties of TlGa<sub>x</sub>In<sub>1-x</sub>Se<sub>2</sub>-layered mixed crystals (0.5 ≤ <i>x</i> ≤ 1) by spectroscopic ellipsometry, transmission, and reflection

No Thumbnail Available

Date

2014

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Taylor & Francis Ltd

Research Projects

Organizational Units

Thumbnail Image
Organizational Unit
Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

Journal Issue

Abstract

The layered semiconducting TlGaxIn1-xSe2-mixed crystals (0.5 <= x <= 1) were studied for the first time by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index, and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The effect of the isomorphic cation substitution (indium for gallium) on critical point energies in TlGaxIn1-xSe2 crystals was established. Moreover, the absorption edge of TlGaxIn1-xSe2 crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of absorption data revealed the presence of both optical indirect and direct transitions. It was found that the energy band gaps decrease with the increase of indium content in the studied crystals.

Description

Gasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686

Keywords

semiconductors, optical properties, ellipsometry

Turkish CoHE Thesis Center URL

Citation

5

WoS Q

Q3

Scopus Q

Q3

Source

Volume

94

Issue

23

Start Page

2623

End Page

2632

URI

https://doi.org/10.1080/14786435.2014.926038
 https://hdl.handle.net/20.500.14411/63

Collections

WOS
Scopus