Determination of optical constants and temperature dependent band gap energy of GaS0.25Se0.75 single crystals

dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.contributor.authorIsik,M.
dc.contributor.authorGasanly,N.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-10-06T11:15:50Z
dc.date.available2024-10-06T11:15:50Z
dc.date.issued2017
dc.departmentAtılım Universityen_US
dc.department-tempIsik M., Department of Electrical and Electronics Engineering, Atilim University, Ankara, 06836, Turkey; Gasanly N., Department of Physics, Middle East Technical University, Ankara, 06800, Turkey, Virtual International Scientific Research Centre, Baku State University, Baku, 1148, Azerbaijanen_US
dc.description.abstractOptical properties of GaS0.25Se0.75 single crystals were investigated by means of temperature-dependent transmission and room temperature reflection experiments. Derivative spectrophotometry analysis showed that indirect band gap energies of the crystal increase from 2.13 to 2.26 eV as temperature is decreased from 300 to 10 K. Temperature dependence of band gap energy was fitted under the light of theoretical expression. The band gap energy change with temperature and absolute zero value of the band gap energy were found from the analyses. The Wemple-DiDomenico single effective oscillator model and Sellmeier oscillator model were applied to the spectral dependence of room temperature refractive index to find optical parameters of the GaS0.25Se0.75 crystal. Chemical composition of the crystal was determined using the energy dispersive spectral measurements.en_US
dc.identifier.citationcount3
dc.identifier.endpage378en_US
dc.identifier.issn1454-4164
dc.identifier.issue5-6en_US
dc.identifier.scopus2-s2.0-85026656650
dc.identifier.scopusqualityQ4
dc.identifier.startpage374en_US
dc.identifier.urihttps://hdl.handle.net/20.500.14411/9467
dc.identifier.volume19en_US
dc.identifier.wosqualityQ4
dc.institutionauthorIşık, Mehmet
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount3
dc.subjectBand gap energyen_US
dc.subjectRefractive indexen_US
dc.subjectSemiconductorsen_US
dc.titleDetermination of optical constants and temperature dependent band gap energy of GaS0.25Se0.75 single crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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