Optoelectronic Properties of Ga<sub>4</Sub>se<sub>3< Single Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorscopusid 6603437094
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.author Ilaiwi, K. F.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:08:35Z
dc.date.available 2024-07-05T15:08:35Z
dc.date.issued 2008
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Qasrawi, A. F.; Ilaiwi, K. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract The optoelectronic properties of Bridgman method-grown Ga(4)Se(3)S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1). en_US
dc.identifier.citationcount 3
dc.identifier.doi 10.1088/0031-8949/78/01/015701
dc.identifier.issn 0031-8949
dc.identifier.issue 1 en_US
dc.identifier.scopus 2-s2.0-47749139655
dc.identifier.uri https://doi.org/10.1088/0031-8949/78/01/015701
dc.identifier.uri https://hdl.handle.net/20.500.14411/1049
dc.identifier.volume 78 en_US
dc.identifier.wos WOS:000258143600029
dc.identifier.wosquality Q2
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Iop Publishing Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 3
dc.subject [No Keyword Available] en_US
dc.title Optoelectronic Properties of Ga<sub>4</Sub>se<sub>3< Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 3
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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