Investigation of Localized Levels in Gas<sub>0.5</Sub>se<sub>0.5< Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Qasrawi, AF
dc.contributor.author Gasanly, NM
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:09:23Z
dc.date.available 2024-07-05T15:09:23Z
dc.date.issued 2002
dc.department Atılım University en_US
dc.department-temp Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal an additional donor level with activation energy of 0.40 eV indicating the extrinsic nature of conduction. The spectral distribution of photocurrent in the photon energy range of 0.65-5.9 eV reveals an indirect band gap of 2.26 eV. The photocurrent-illumination intensity dependence follows the law I-ph proportional to F-gamma, with gamma being 1.0, 0.65, and 0.5 at low, moderate and high illumination intensities, respectively. The corresponding behavior indicates the domination of monomolecular recombination, near equal densities of trapped and recombination centers and bimolecular recombination. It is observed that the photocurrent increases in the temperature range from 250 K up to T-m = 360 K and decreases for T > T-m. The temperature dependence of the photocurrent reveals two additional impurity levels with activation energies of 0.14 and 0.10 eV below and above Tm, respectively. en_US
dc.identifier.citationcount 17
dc.identifier.doi 10.1002/1521-396X(200211)194:1<81
dc.identifier.endpage 88 en_US
dc.identifier.issn 0031-8965
dc.identifier.issue 1 en_US
dc.identifier.scopus 2-s2.0-0036863304
dc.identifier.startpage 81 en_US
dc.identifier.uri https://doi.org/10.1002/1521-396X(200211)194:1<81
dc.identifier.uri https://hdl.handle.net/20.500.14411/1157
dc.identifier.volume 194 en_US
dc.identifier.wos WOS:000179783200010
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Wiley-v C H verlag Gmbh en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 17
dc.subject [No Keyword Available] en_US
dc.title Investigation of Localized Levels in Gas<sub>0.5</Sub>se<sub>0.5< Layered Crystals by Means of Electrical, Space-Charge Limited Current and Photoconductivity Measurements en_US
dc.type Article en_US
dc.wos.citedbyCount 16
dspace.entity.type Publication
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relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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