Investigation of localized levels in GaS<sub>0.5</sub>Se<sub>0.5</sub> layered crystals by means of electrical, space-charge limited current and photoconductivity measurements
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
dc.authorscopusid | 6603962677 | |
dc.authorscopusid | 35580905900 | |
dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
dc.contributor.author | Qasrawı, Atef Fayez Hasan | |
dc.contributor.author | Gasanly, NM | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:09:23Z | |
dc.date.available | 2024-07-05T15:09:23Z | |
dc.date.issued | 2002 | |
dc.department | Atılım University | en_US |
dc.department-temp | Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey; Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey | en_US |
dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 | en_US |
dc.description.abstract | To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal an additional donor level with activation energy of 0.40 eV indicating the extrinsic nature of conduction. The spectral distribution of photocurrent in the photon energy range of 0.65-5.9 eV reveals an indirect band gap of 2.26 eV. The photocurrent-illumination intensity dependence follows the law I-ph proportional to F-gamma, with gamma being 1.0, 0.65, and 0.5 at low, moderate and high illumination intensities, respectively. The corresponding behavior indicates the domination of monomolecular recombination, near equal densities of trapped and recombination centers and bimolecular recombination. It is observed that the photocurrent increases in the temperature range from 250 K up to T-m = 360 K and decreases for T > T-m. The temperature dependence of the photocurrent reveals two additional impurity levels with activation energies of 0.14 and 0.10 eV below and above Tm, respectively. | en_US |
dc.identifier.citation | 17 | |
dc.identifier.doi | 10.1002/1521-396X(200211)194:1<81 | |
dc.identifier.endpage | 88 | en_US |
dc.identifier.issn | 0031-8965 | |
dc.identifier.issue | 1 | en_US |
dc.identifier.scopus | 2-s2.0-0036863304 | |
dc.identifier.startpage | 81 | en_US |
dc.identifier.uri | https://doi.org/10.1002/1521-396X(200211)194:1<81 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/1157 | |
dc.identifier.volume | 194 | en_US |
dc.identifier.wos | WOS:000179783200010 | |
dc.language.iso | en | en_US |
dc.publisher | Wiley-v C H verlag Gmbh | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | [No Keyword Available] | en_US |
dc.title | Investigation of localized levels in GaS<sub>0.5</sub>Se<sub>0.5</sub> layered crystals by means of electrical, space-charge limited current and photoconductivity measurements | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
relation.isAuthorOfPublication | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
relation.isAuthorOfPublication.latestForDiscovery | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
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