Semiconductor Laser Modeling With Anfis
No Thumbnail Available
Date
2009
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Open Access Color
OpenAIRE Downloads
OpenAIRE Views
Abstract
In this study, neuro-fuzzy (NF) models are used which are well-known robust learning systems that combine the advantages of fuzzy sets and neuro-computation theory. Particularly, a single model based on the adaptive network-based fuzzy inference system (ANFIS) is successfully developed from the amplified spontaneous emission (ASE) spectra of a semiconductor laser diode in order to obtain the critical quantities and their dependences on wavelength and currents. These critical quantities are the differential gain, the induced effective index change and the linewidth enhancement factor (α parameter). The comparison of single model results and the experimental measurements validate the presented approach. ©2009 IEEE.
Description
Keywords
[No Keyword Available]
Turkish CoHE Thesis Center URL
Fields of Science
Citation
WoS Q
Scopus Q
Source
2009 International Conference on Application of Information and Communication Technologies, AICT 2009 -- 2009 International Conference on Application of Information and Communication Technologies, AICT 2009 -- 14 October 2009 through 16 October 2009 -- Baku -- 79447