Analysis of optical constants and temperature-dependent absorption edge of GaS<sub>0.75</sub>Se<sub>0.25</sub> layered crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:29:06Z
dc.date.available2024-07-05T15:29:06Z
dc.date.issued2017
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, Mehmet] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, Nizami] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, Nizami] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijanen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;en_US
dc.description.abstractGaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measurements in the wavelength range of 450-1000 nm. Derivative spectrophotometry analyses on temperature dependent transmittance spectra showed that band gap energies of the crystal increase from 239 eV (T=300 K) to 2.53 eV (T=10 K). Band gap at zero temperature, average phonon energy, electron phonon coupling parameter and rates of change of band gap energy with temperature were found from the temperature dependences of band gap energies under the light of different models reported in literature. Furthermore, the dispersion of room temperature refractive index was discussed in terms of single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, zero-frequency refractive index, were determined as a result of analyses. (C) 2017 Elsevier Ltd. All rights reserved.en_US
dc.identifier.citation2
dc.identifier.doi10.1016/j.materresbull.2017.03.025
dc.identifier.endpage284en_US
dc.identifier.issn0025-5408
dc.identifier.issn1873-4227
dc.identifier.scopus2-s2.0-85015417903
dc.identifier.startpage280en_US
dc.identifier.urihttps://doi.org/10.1016/j.materresbull.2017.03.025
dc.identifier.urihttps://hdl.handle.net/20.500.14411/2866
dc.identifier.volume90en_US
dc.identifier.wosWOS:000401218400040
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherPergamon-elsevier Science Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectChalcogenidesen_US
dc.subjectLayered compoundsen_US
dc.subjectCrystal growthen_US
dc.subjectOptical propertiesen_US
dc.titleAnalysis of optical constants and temperature-dependent absorption edge of GaS<sub>0.75</sub>Se<sub>0.25</sub> layered crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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