Kayed, Tarek Said

Kayed, Tarek Said

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Kayed, Tarek S.
T.,Kayed
K., Tarek Said
T.S.Kayed
Kayed, Tarek Said
T., Kayed
Tarek Said, Kayed
K.,Tarek Said
Kayed,T.S.
Kayed, TS
Kayed, T. S.
Kayed, TS

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23

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21

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199

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Now showing 1 - 10 of 23

Citation Count: 10
Characterization of Au/As₂Se₃/MoO₃/Ag hybrid devices designed for dual optoelectronic applications
(Elsevier, 2020) Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Kayed, Tarek Said; Department of Electrical & Electronics Engineering
In this work, hybrid devices composed of n-As2Se3/p-MoO3 encapsulated between two Schottky shoulders (Au/n-As2Se3, Ag/MoO3) are prepared and characterized. While the structural analyses proofed the preferred growth of monoclinic MoO3 onto amorphous layers of As2Se3, the spectroscopic ellipsometry analysis revealed the high frequency dielectric constants, the effective mass and the negative pseudodielectric constant values. Electrically, the hybrid device displayed both tunneling and standard diode characteristics. As passive mode devices, the capacitance-voltage characteristics displayed the accumulation-depletion -inversion modes in the device. Furthermore, the conductivity spectral analysis has shown that the current conduction is dominated by the quantum mechanical tunneling and correlated barriers hoping mechanisms. The amplitude of the reflection coefficient and the return loss spectral analyses indicated that the hybrid devices are band stop filters in addition to it is usability as nonlinear optical interfaces, CMOS device and tunneling diodes.
Citation Count: 5
Properties of Se/InSe Thin-Film Interface
(Springer, 2016) Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Kayed, Tarek Said; Department of Electrical & Electronics Engineering
Se, InSe, and Se/InSe thin films have been prepared by the physical vapor deposition technique at pressure of similar to 10(-5) torr. The structural, optical, and electrical properties of the films and Se/InSe interface were investigated by means of x-ray diffraction (XRD) analysis, ultraviolet-visible spectroscopy, and current-voltage (I-V) characteristics. XRD analysis indicated that the prepared InSe films were amorphous while the Se films were polycrystalline having hexagonal structure with unit cell parameters of a = 4.3544 and c = 4.9494 . Spectral reflectance and transmittance analysis showed that both Se and InSe films exhibited indirect allowed transitions with energy bandgaps of 1.92 eV and 1.34 eV, respectively. The Se/InSe interface exhibited two energy bandgaps of 0.98 eV and 1.73 eV above and below 2.2 eV, respectively. Dielectric constant values were also calculated from reflectance spectra for the three layers in the frequency range of 500 THz to 272 THz. The dielectric constant exhibited a promising feature suggesting use of the Se/InSe interface as an optical resonator. Moreover, the Au/Se/InSe/Ag heterojunction showed some rectifying properties that could be used in standard optoelectronic devices. The ideality factor and height of the energy barrier to charge carrier motion in this device were found to be 1.72 and 0.66 eV, respectively.
Citation Count: 5
Magnetoresistance, voltage-current characteristics, and Hall effect measurements of bulk MgB₂ superconductors
(Wiley-v C H verlag Gmbh, 2004) Kayed, Tarek Said; Department of Electrical & Electronics Engineering
Bulk MgB2 samples were prepared from the commercially available powder (Alfa-Aesar). One of the samples was used in measuring the transport properties by the DC four-probe technique while the other was used in measuring Hall effect using the van-der-Pauw configuration. From the transport measurements, we noticed that the R-T curves shift to lower temperatures under applied magnetic field without any observed enlargement of the transition width. T-c gradually decreases from 37 K at zero field to 32 K at B = 1.4 T. Our V-I data were found to obey a power law expression V proportional to I-beta(T,I- B). The change of beta with temperature and magnetic field was shown and discussed. R-H is positive under positive applied magnetic field. The 1/R-H linear dependency on T, usually observed in high temperature superconductors, could not be observed in our case. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Citation Count: 9
Effect of lithium doping on the properties of Tl-based superconductors
(Iop Publishing Ltd, 2001) Kayed, Tarek Said; Özkan, Hakan; Gasanly, NM; Department of Electrical & Electronics Engineering
The effects of lithium doping on the formation and properties of the T1-based superconductors have been studied. Lithium atoms up to around 3 mol.% have been added to the oxides of nominal composition Tl1.8Ba2Ca2.2Cu3Ox, and the usual solid-state reaction method has been applied. Lithium additions in the range 0.23-0.29 mol.% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of lithium additions diminish the Tl-2223 phase, reduce the fraction of the Tl-2212 phase, and cause separate non-superconducting phases to be formed.
Citation Count: 2
Characterization of As₂Se₃/MoO₃ heterojunction designed for multifunctional operations
(Iop Publishing Ltd, 2021) Qasrawı, Atef Fayez Hasan; Kayed, T. S.; Kayed, Tarek Said; Department of Electrical & Electronics Engineering
In this article, As2Se3/MoO3 heterojunction devices are structurally, compositionally, optically and electrically characterized. The heterojunction devices which are prepared by the thermal evaporation technique under vacuum pressure of 10(-5) mbar are observed to exhibit amorphous nature of growth. The optical spectrophotometry measurements and analyses on the heterojunction devices revealed a conduction and valence band offsets of values of 2.64 and 4.08 eV, respectively. In addition, the dielectric dispersion and the optical conductivity parametric analyses have shown that the heterojunction could exhibit large drift mobility value up to 73.7 cm(2) V-1 s(-1). From electrical point of view, while the capacitance- voltage curves reveal characteristics of MOSFET devices, the current--voltage curves display tunneling diode characteristics. The features of the As2Se3/MoO3 devices including the band offsets, drift mobility, plasmon frequency, microwave band filtering and MOSFET characteristics make them attractive for use as thin films transistors suitable electrical and optical applications.
Citation Count: 2
Voltage-current characteristics of Bi-2223 superconducting tape near T_c under γ irradiation
(Wiley-v C H verlag Gmbh, 2004) Kayed, Tarek Said; Erhan, İnci; Mathematics; Department of Electrical & Electronics Engineering
Voltage-current characteristics at four different applied magnetic fields (7, 20, 30, and 40 mT) of Bi2Sr2Ca2CU3Ox superconducting tape were measured in the temperature range from 100 to 115 K. They were also measured at zero magnetic field before and after gamma irradiations up to 10 MRad at different temperatures just below the critical temperature. The data were fitted to a power law expression V = I (beta(T)) in which the exponential parameter P under 20 mT field and after irradiation is found to fluctuate around three and then drops to unity near the critical temperature which may be interpreted as a sign of Kosterlitz-Thouless transition. The electrical properties of the tape were found to be very sensitive to gamma irradiation where most of the changes take place in low gamma doses.
Citation Count: 25
Fabrication and some physical properties of AgIn₅S₈ thin films
(Elsevier Science Sa, 2004) Qasrawı, Atef Fayez Hasan; Kayed, TS; Kayed, Tarek Said; Erhan, İnci; Department of Electrical & Electronics Engineering; Mathematics
AgIn5S8 thin films are deposited on glass substrates, kept at 300 K, by thermal evaporation of AgIn5S8 single crystals under the pressure of 10-5 Torr. The X-ray fluorescence analysis revealed that the films have a weight percentage of similar to11.5% Ag, 61.17% In, and 27.33% S which corresponds to 1:5:8 stoichiometric composition. X-ray analysis of the films reveals the polycrystalline nature of the films. The lattice parameter (a) of the films was calculated to be 10.784(5) Angstrom. The dark n-type electrical conductivity of the films was measured in the temperature range of 30-350 K. The conductivity data analysis shows that the thermionic emission of the charge carriers having activation energies of 147 and 224 meV in the temperature ranges of 130-230 and 240-350 K, respectively, are the dominant transport mechanism in the films. The variable range hopping transport mechanism is dominant below 130 K. The room temperature photocurrent-photon energy dependency predicts a band gap of 1.91 eV of the films. The illumination intensity-photocurrent dependency measured in the intensity range of 13-235 W cm(-2) reveals monomolecular recombination (linear) in the films and bimolecular recombination (sublinear) at the film surface corresponding to low and high applied illumination intensities, respectively. The time-dependant photocurrent measured at fixed illumination intensity reveals a response time of 0.85, 2.66 and 10.0 s in the time periods of 0-0.5, 0.5-1.0, and 1.0-10.0 s, respectively. (C) 2004 Elsevier B.V. All rights reserved.
Citation Count: 3
Effect of magnetic field and γ irradiation on the properties of Tl-2212 superconducting tape
(Wiley-v C H verlag Gmbh, 2002) Kayed, Tarek Said; Erhan, İnci; Mathematics; Department of Electrical & Electronics Engineering
The critical temperature and critical current of Tl-2212 superconducting sample in the form of a tape have been studied near T-c under magnetic field and gamma irradiation. T-c decreases from 109 to 94 K with increase of magnetic field up to 300 mT. In 77-109 K range, J(c) decreases rapidly in low fields up to around 50 mT followed by a very slow decrease in J(c) up to 300 mT. T-c of the sample did not change up to 100 MR gamma dose and then started to decrease from 109 to 102 K with increase of gamma dose up to 800 MR, most of the change taking place in high doses. The critical currents of the sample decreased steadily with gamma irradiation up to 600 MR after which no further change was noticed.
Citation Count: 4
Optical characterization of the MgO/InSe interface
(Wiley-v C H verlag Gmbh, 2015) Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Kayed, Tarek Said; Department of Electrical & Electronics Engineering
In this work, a 500nm thick MgO layer deposited on the physically evaporated amorphous InSe thin film substrate is designed as a window for the MgO/InSe terahertz resonators. The optical properties including the reflectance and the dielectric constant dependence on the angle of incidence ((i)), the normal transmittance, and the absorption coefficient of the interface were investigated in the range of approximate to 270-1000THz. It was observed that the total reflectivity of the substrate continuously decreases with increasing (i) in the range of 33-80 degrees. The spectra of InSe and MgO/InSe revealed strong dielectric resonance patterns below 450THz. The energy bands of the direct allowed transitions in InSe film shrunk from 3.90, 2.75, and 1.49eV to 3.71, 2.10, and 0.96eV when MgO was deposited onto the InSe film. By analyzing the dielectric spectra, we were able to determine the static and lattice dielectric constants in addition to the oscillator and dispersion energies. The latter energy increased from 27.43 to 35.84 via interface construction.
Citation Count: 4
Structural, Optical, Dielectric and Electrical Properties of Al-Doped ZnSe Thin Films
(Springer, 2019) Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Kayed, Tarek Said; Department of Electrical & Electronics Engineering
In this work, the heavy aluminum doping effects on the compositional, structural, optical, dielectric and electrical properties of ZnSe thin films are investigated. It is observed that the Zn/Se compositional ratio increases with increasing Al content. The major cubic phase of ZnSe becomes more pronounced compared to the hexagonal phase. In addition, the presence of Al in the structure of ZnSe causes lattice constant contraction, decreased the grain size and increased both of the strain and defect density. Optically, the Al doping increased the light absorbability and widens both of the energy band gap and energy interbands which are present in the band gap of ZnSe films. Moreover, the Al doping into ZnSe lowers the high frequency dielectric constant and enhances the optical conductivity. On the other hand, the capacitance spectra which are studied in the frequency domain of 0.01-1.80GHz displayed negative capacitance effect associated with resonance-antiresonance phenomena upon doping of ZnSe with Al. Such enhancements in the physical properties of ZnSe that are achieved via Al doping make the zinc selenide thin films more appropriate for electronic and optoelectronic technological applications.

Kayed, Tarek Said

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Scholarly Output

23

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21

Citation Count

199

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