Properties of boron doped TI-Ba-Ca-Cu-O superconductors

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2003

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Pergamon-elsevier Science Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The effects of boron doping on the formation and properties of the Tl-based superconductors have been studied. Up to 10 wt.% boron has been added to the oxides having the nominal composition, Tl1.8Ba2Ca2.2Cu3Ox, by the usual solid-state reaction method. Boron additions in the range 0.8-1.0% increase the fraction of the Tl-2223 phase and significantly improve the critical temperature of the samples. Higher amounts of boron additions eliminate the Tl-2223 phase, reduce the fraction of Tl-2212 phase and cause separate non-superconducting phases to be formed. The formation of non-superconducting phases does not allow us to obtain pure Tl-2212 phase. (C) 2002 Elsevier Science Ltd. All rights reserved.

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Kayed, Tarek/0000-0003-3482-4166
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Keywords

superconductors, X-ray diffraction, crystal structure, electrical properties

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7

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Q2

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Volume

38

Issue

3

Start Page

533

End Page

538

URI

https://doi.org/10.1016/S0025-5408(02)01053-X
 https://hdl.handle.net/20.500.14411/1147

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