Qasrawı, Atef Fayez Hasan

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Profile URL
https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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WoS Researcher ID

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AFFORDABLE AND CLEAN ENERGY
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Scholarly Output

226

Articles

222

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84/0

Supervised MSc Theses

0

Supervised PhD Theses

0

WoS Citation Count

1984

Scopus Citation Count

2000

Patents

0

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0

WoS Citations per Publication

8.78

Scopus Citations per Publication

8.85

Open Access Source

17

Supervised Theses

0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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End date: 2009Subject: optical properties

Scholarly Output Search Results

Now showing 1 - 8 of 8
  • Thumbnail Image
    Article
    Citation - WoS: 10
    Citation - Scopus: 11
    Dispersive Optical Constants of Thermally Deposited Agin5s8< Thin Films
    (Elsevier Science Sa, 2008) Qasrawi, A. F.
    Agln(5)S(8) thin films were obtained by the thermal evaporation of Agln(5)S(8) crystals onto ultrasonically cleaned glass substrates. The films are found to exhibit polycrystalline cubic structure. The calculated lattice parameter of the unit cell (a) is 10.78 angstrom. The transmittance data of the as grown films which was recorded at 300 K in the incidence wavelength (lambda) range of 320-1000 nm are used to calculate the refractive, n(lambda). The transmittance and reflectance data are also used to calculate the absorption coefficient of the as grown Agln5S8 thin films. The fundamental absorption edge is found to be corresponding to a direct allowed transitions energy band gap. This band-to-band transition energy is found to be 1.78 eV and it is consistent with that reported for Agln(5)S(8) single crystals. (c) 2007 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 28
    Citation - Scopus: 29
    Annealing Effects on the Structural and Optical Properties of Agin5s8< Thin Films
    (Elsevier Science Sa, 2008) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Qasrawı, Atef Fayez Hasan; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    Due to its importance as a perspective material for application in optoelectronic semiconductor devices, the thermal annealing effects on the structural and optical properties of the as-grown vacuum evaporated AgIn5S8 thin films have been investigated. The X-ray data analysis have shown that these films are polycrystalline in nature and exhibit better crystallization with increasing crystallite size and slightly, decreasing unit cell lattice parameter as annealing temperature is raised from 450 to 600 K. The optical energy band gap for the as-grown and thermally annealed films is found to be of direct allowed transitions type. The energy band gap exhibited values of 1.78, 1.74 and 1.62 eV as the samples were annealed at, 450 and 600 K, respectively. This indicates the ability of altering the band gap values of this material by the thermal annealing process. The structural and optical features seem to be suitable for semiconductor device production such as solar cell converters, which has successfully been fabricated by others, metal-insulator-semiconductor (MIS) and metal - oxide - semiconductor (MOS) devices, as well. (c) 2007 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 7
    Citation - Scopus: 8
    Optical Properties of Tl2ingas4< Layered Single Crystal
    (Elsevier Science Bv, 2007) Qasrawi, A. F.; Gasanly, N. M.
    The temperature dependence of the optical band gap of Tl2InGaS4 single crystal in the temperature region of 300-500 K and the room temperature refractive index, n(lambda), have been investigated. The absorption coefficient, which was calculated from the transmittance and reflectance spectra in the incident photon energy range of 2.28-2.48 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.35 eV) that exhibits a temperature coefficient of -4.03 x 10(-4) eV/K. The room temperature n(lambda), calculated from the reflectance and transmittance data, allowed the identification of the oscillator strength and energy, static and lattice dielectric constants, and static refractive index as 16.78 eV and 3.38 eV, 5.96 and 11.77, and 2.43, respectively. (c) 2006 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 32
    Citation - Scopus: 32
    Temperature Dependence of the Band Gap, Refractive Index and Single-Oscillator Parameters of Amorphous Indium Selenide Thin Films
    (Elsevier Science Bv, 2007) Qasrawi, A. F.
    InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass substrates under pressure of similar to 10(-5) Torr. The structural and compositional analysis revealed that these films are of amorphous nature and are atomically composed of similar to 51% In and similar to 49% Se. The reflectance and transmittance of the films are measured at various temperatures (300-450 K) in the incident photon energy range of 1.1-2.1 eV. The direct allowed transitions band gap - calculated at various temperatures - show a linear dependence on temperature. The absolute zero value band gap and the rate of change of the band gap with temperature are found to be (1.62 +/- 0.01) eV and -(4.27 +/- 0.02) x 10(-4) eV/K, respectively. The room temperature refractive index is estimated from the transmittance spectrum. The later analysis allowed the identification of the static refractive index, static dielectric constant, oscillator strength and oscillator energy. (c) 2006 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 18
    Citation - Scopus: 19
    Temperature Dependence of the Direct Allowed Transitions Band Gap and Optical Constants of Polycrystalline Α-in2se3< Thin Films
    (Elsevier Science Sa, 2006) Qasrawi, A. F.
    Polycrystalline alpha-In2Se3 thin films were obtained by the thermal evaporation of alpha-In2Se3 crystals onto glass substrates kept at temperature of 200 degrees C. The temperature dependence of the optical band gap in the temperature region of 300-480 K and the room temperature refractive index, it (lambda), of these films have been investigated. The absorption edge shifts to lower energy values as temperature increases. The fundamental absorption edge corresponds to a direct allowed transitions energy gap that exhibits a temperature coefficient of -8.51 x 10(-4) (eV/K). The room temperature n(lambda) which was calculated from the transmittance data allowed the identification of the oscillator strength and energy, static dielectric constant and static refractive index as 20.7 and 2.15 eV, 10.70 and 3.26, respectively. (c) 2006 Elsevier B.V. All rights reserved.
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    Article
    Citation - WoS: 42
    Citation - Scopus: 41
    Synthesis and Characterization of Mg2b2<
    (Pergamon-elsevier Science Ltd, 2005) Qasrawi, AF; Kayed, TS; Mergen, A; Gürü, M
    Magnesium borate of the form Mg2B2O5 has been prepared and its structural and thermal properties were studied using X-ray diffraction and differential thermal analysis. An investigation of the electrical and optical properties of Mg2B2O5 system has been carried out. The electrical resistivity of the sample was measured in the temperature range of 170-400 K. The data analysis revealed an extrinsic nature of the conductivity with two impurity levels located at 0.13 and 0.71 eV in the temperature ranges of 170-230 K and 240-400 K, respectively. The optical transmission and reflection was recorded at 300 K in the incident photon energy range of 3.0-6.0 eV. The absorption coefficient data analysis revealed an indirect optical energy band gap of 4.73 eV. In addition, two impurity levels located at 3.43, and 4.49 eV were observed in the absorption spectra. (c) 2005 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 4
    Citation - Scopus: 4
    Crystal Data and Indirect Optical Transitions in Tl2ingase4< Crystals
    (Pergamon-elsevier Science Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K. (C) 2007 Elsevier Ltd. All rights reserved.
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    Article
    Citation - WoS: 10
    Citation - Scopus: 10
    Energy Band Gap and Oscillator Parameters of Ga4se3< Single Crystals
    (Pergamon-elsevier Science Ltd, 2007) Qasrawi, A. F.; Gasanly, N. M.
    The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 and 2.55, respectively. (C) 2007 Elsevier Ltd. All rights reserved.