Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
Name Variants
Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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SUSTAINABLE CITIES AND COMMUNITIES
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14

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9

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This researcher does not have a Scopus ID.
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Scholarly Output

222

Articles

218

Views / Downloads

640/0

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0

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WoS Citation Count

1886

Scopus Citation Count

1906

WoS h-index

21

Scopus h-index

21

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WoS Citations per Publication

8.50

Scopus Citations per Publication

8.59

Open Access Source

17

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JournalCount
Journal of Electronic Materials15
Crystal Research and Technology13
physica status solidi (a)12
Journal of Alloys and Compounds11
Materials Science in Semiconductor Processing11
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Author: Gasanly, NMSubject: acoustic

Scholarly Output Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Carrier Transport Properties of Ins Single Crystals
    (Wiley-blackwell, 2003) Qasrawi, AF; Gasanly, NM
    The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m(0), a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
  • Thumbnail Image
    Article
    Citation - WoS: 27
    Citation - Scopus: 30
    Crystal Data, Electrical Resistivity, and Hall Mobility of N-Type Agin5s8< Single Crystals
    (Wiley-v C H verlag Gmbh, 2001) Qasrawi, AF; Gasanly, NM
    The X-ray diffraction has revealed that AgIn5S8 is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.08286 nm. The electrical resistivity and Hall effect of n-type AgIn5S8 crystals are measured in the temperature range of 50-400 K. A carrier effective mass of 0.20 m(0), an acceptor to donor concentration ratio of 0.8 and an acoustic phonons deformation potential of 20 eV are identified from the Hall effect measurement. The Hall mobility data art: analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.
  • Thumbnail Image
    Article
    Citation - WoS: 18
    Citation - Scopus: 19
    Crystal Data, Photoconductivity and Carrier Scattering Mechanisms in Cuin5s8< Single Crystals
    (Wiley-v C H verlag Gmbh, 2001) Qasrawi, AF; Gasanly, NM
    The X-ray diffraction has revealed that CuIn5S8 is a single phase crystal of cubic spinet structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn5S8 crystals are measured in the temperature range of 50-400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of similar to1.35 eV at 0 K, a carrier effective mass of 0.2 m(0), an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.