Qasrawı, Atef Fayez Hasan

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https://hdl.handle.net/20.500.14411/7716
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Qasrawi, Atef Fayez
Atef Fayez Hasan, Qasrawı
Qasrawı,A.F.H.
Qasrawi,A.F.H.
Q., Atef Fayez Hasan
Q.,Atef Fayez Hasan
Atef Fayez Hasan, Qasrawi
Qasrawi, Atef Fayez Hasan
A.F.H.Qasrawı
A.F.H.Qasrawi
A., Qasrawi
A.,Qasrawı
Qasrawı, Atef Fayez Hasan
Qasrawi, A. F.
Qasrawi,A.F.
Qasrawi, AF
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef Fayez
Qasrawi, Atef F.
Qasrawi, Atef A.
Qasrawi, Atef
Job Title
Doçent Doktor
Email Address
atef.qasrawi@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
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AFFORDABLE AND CLEAN ENERGY
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Scholarly Output

226

Articles

222

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84/0

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0

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WoS Citation Count

1984

Scopus Citation Count

2000

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WoS Citations per Publication

8.78

Scopus Citations per Publication

8.85

Open Access Source

17

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0

JournalCount
Crystal Research and Technology16
Journal of Electronic Materials15
physica status solidi (a)12
Materials Science in Semiconductor Processing11
Journal of Alloys and Compounds11
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2008 - 200932010 - 20112
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Author: Gasanly, N. M.Subject: Crystal growth

Scholarly Output Search Results

Now showing 1 - 5 of 5
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Structural, Electrical and Anisotropic Properties of Tl4se3< Chain Crystals
    (Pergamon-elsevier Science Ltd, 2009) Qasrawi, A. F.; Gasanly, N. M.
    The structure, the anisotropy effect on the current transport mechanism and the space charge limited current in Tl4Se3S chain crystals have been studied by means of X-ray diffraction, electrical conductivity measurements along and perpendicular to the crystal's c-axis and the current voltage characteristics. The temperature-dependent electrical conductivity analysis in the region of 150-400 K, revealed the domination of the thermionic emission of charge carriers over the chain boundaries above 210 and 270 K along and perpendicular to the c-axis, respectively. Below these temperatures, the variable range hopping is dominant. At a consistent temperature range, the thermionic emission analysis results in conductivity activation energies of 280 and 182 meV, along and perpendicular to the c-axis, respectively. Likewise, the hopping parameters are altered significantly by the conductivity anisotropy. The current-voltage characteristics revealed the existence of hole trapping state being located at 350 meV above the valence band of the crystal. (C) 2009 Elsevier Ltd. All rights reserved.
  • Thumbnail Image
    Article
    Hopping Conduction in Ga4se3< Layered Single Crystals
    (Pergamon-elsevier Science Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    The conduction mechanism in Ga4Se3S single crystals has been investigated by means of dark and illuminated conductivity measurements for the first time. The temperature-dependent electrical conductivity analysis in the region of 100-350 K, revealed the dominance of the thermionic emission and the thermally assisted variable range hopping (VRH) of charged carriers above and below 170 K, respectively. The density of states near the Fermi level and the average hopping distance for this crystal in the dark were found to be 7.20 x 10(15) cm(-3) eV(-1) and 7.56 x 10(-6) cm, respectively. When the sample was illuminated, the Mott's VRH parameters are altered, particularly, the average hopping distance and the density of states near the Fermi level increase when light intensity increases. This action is attributed to the electron generation by photon absorption, which in turn leads to the Fermi level shift and/or trap density reduction by electron-hole recombination. (C) 2008 Elsevier Ltd. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 1
    Citation - Scopus: 1
    Dark Electrical Conductivity and Photoconductivity of Ga4se3< Layered Single Crystals
    (Pergamon-elsevier Science Ltd, 2008) Qasrawi, A. F.; Gasanly, N. M.
    Ga(4)Se(3)S layered crystals were studied through the dark electrical conductivity, and illumination- and temperature-dependent photoconductivity in the temperature region of 100-350 K. The dark electrical conductivity reflected the existence of two energy states located at 3 10 and 60 meV being dominant above and below 170 K, respectively. The photoconductivity measurements revealed the existence of another two energy levels located at 209 and 91 meV above and below 230 K. The photoconductivity was observed to increase with increasing temperature. The illumination dependence of photoconductivity was found to exhibit linear and supralinear recombination above and below 280 K, respectively. The change in recombination mechanism was attributed to the exchange in the behavior of sensitizing and recombination centers. (C) 2008 Elsevier Ltd. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 9
    Citation - Scopus: 9
    Transient and Steady State Photoelectronic Analysis in Tlinse2 Crystals
    (Pergamon-elsevier Science Ltd, 2011) Qasrawi, A. F.; Gasanly, N. M.
    The temperature and illumination effects on the transient and steady state photoconductivities of TlInSe2 crystals have been studied. Namely, two recombination centres located at 234 and at 94 meV and one trap center located at 173 meV were determined from the temperature-dependent steady state and transient photoconductivities, respectively. The illumination dependence of photoconductivity indicated the domination of sublinear and supralinear recombination mechanisms above and below 160 K, respectively. The change in the recombination mechanism is attributed to the exchange of roles between the linear recombination at the surface and trapping centres in the crystal, which become dominant as temperature decreases. The transient photoconductivity measurement allowed the determination of the capture coefficient of traps for holes as 3.11 x 10(-22) cm(-2). (C) 2011 Elsevier Ltd. All rights reserved.
  • Thumbnail Image
    Article
    Citation - WoS: 2
    Citation - Scopus: 2
    Anisotropic Electrical and Dispersive Optical Parameters in Ins Layered Crystals
    (Pergamon-elsevier Science Ltd, 2010) Qasrawi, A. F.; Gasanly, N. M.
    The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range hopping above and below 100 K, respectively. At high temperatures (T > 100 K) the conductivity anisotropy, s, decreased sharply with decreasing temperature following the law s proportional to exp(-E(s)/kT). The anisotropy activation energy, E(s), was found to be 330 and 17 meV above and below 220 K, respectively. Below 100 K, the conductivity anisotropy is invariant with temperature. in that region, the calculated hopping parameters are altered significantly by the conductivity anisotropy. The optical reflectivity analysis in the wavelength range 250-650 nm revealed a clear anisotropy effect on the dispersive optical parameters. In particular, the static refractive index, static dielectric constant, lattice dielectric constant, dispersion energy and oscillator energy exhibited values of 2.89, 8.39, 19.7, 30.02 eV and 4.06 eV, and values of 2.76, 7.64, 25.9, 22.26 eV and 3.35 eV for light polarized along the a-axis and the b-axis, respectively. (C) 2009 Elsevier Ltd. All rights reserved.