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Işık, Mehmet
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Mehmet, Işık
M.,Işık
Isik, Mehmet
Mehmet, Isik
I., Mehmet
I.,Mehmet
Işık,M.
Isik,M.
I.,Mehmet
M.,Isik
Işık, Mehmet
M., Isik
Isik, M.
M.,Işık
Isik, Mehmet
Mehmet, Isik
I., Mehmet
I.,Mehmet
Işık,M.
Isik,M.
I.,Mehmet
M.,Isik
Işık, Mehmet
M., Isik
Isik, M.
Job Title
Profesör Doktor
Email Address
mehmet.isik@atilim.edu.tr
Main Affiliation
Department of Electrical & Electronics Engineering
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
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WoS Researcher ID
Sustainable Development Goals
2
ZERO HUNGER
0
Research Products
11
SUSTAINABLE CITIES AND COMMUNITIES
0
Research Products
14
LIFE BELOW WATER
1
Research Products
6
CLEAN WATER AND SANITATION
0
Research Products
1
NO POVERTY
0
Research Products
5
GENDER EQUALITY
0
Research Products
9
INDUSTRY, INNOVATION AND INFRASTRUCTURE
0
Research Products
16
PEACE, JUSTICE AND STRONG INSTITUTIONS
0
Research Products
17
PARTNERSHIPS FOR THE GOALS
0
Research Products
15
LIFE ON LAND
1
Research Products
10
REDUCED INEQUALITIES
0
Research Products
7
AFFORDABLE AND CLEAN ENERGY
11
Research Products
8
DECENT WORK AND ECONOMIC GROWTH
0
Research Products
4
QUALITY EDUCATION
0
Research Products
12
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0
Research Products
3
GOOD HEALTH AND WELL-BEING
1
Research Products
13
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0
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This researcher does not have a Scopus ID.
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Scholarly Output
173
Articles
169
Views / Downloads
442/792
Supervised MSc Theses
3
Supervised PhD Theses
0
WoS Citation Count
1802
Scopus Citation Count
1861
WoS h-index
20
Scopus h-index
20
Patents
0
Projects
0
WoS Citations per Publication
10.42
Scopus Citations per Publication
10.76
Open Access Source
11
Supervised Theses
3
Google Analytics Visitor Traffic
| Journal | Count |
|---|---|
| Optical Materials | 17 |
| Physica B: Condensed Matter | 16 |
| Journal of Luminescence | 15 |
| Materials Science in Semiconductor Processing | 14 |
| Journal of Materials Science: Materials in Electronics | 12 |
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169 results
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Now showing 1 - 10 of 169
Article Citation - WoS: 4Citation - Scopus: 4Optical Characterization of (tlins2)0.5< Crystal by Ellipsometry: Linear and Optical Constants for Optoelectronic Devices(Springer, 2023) Guler, I.; Isik, M.; Gasanly, N.TlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.Article Citation - WoS: 8Citation - Scopus: 8Spectroscopic ellipsometry study of Bi12TiO20 single crystals(Springer, 2021) Isik, M.; Gasanly, N. M.; Darvishov, N. H.; Bagiev, V. E.Bi12XO20 (X: Si, Ge, Ti, etc.) ternary compounds have attracted attention especially due to their fascinating photorefractive characteristics. The present paper introduces the structural and optical characteristics of Bi12TiO20 single crystals grown by Czochralski method. X-ray diffraction pattern of the compound exhibited sharp and intensive peaks corresponding to parallel planes of cubic crystalline structure. The lattice constant of the cubic structure was determined as a = 1.0118 nm using a diffraction pattern indexing program. The optical characterization of the Bi12TiO20 single crystals was carried through spectroscopic ellipsometry experiments performed in the 1.2-5.0 eV spectral range. The spectral dependencies of refractive index, extinction coefficient, and complex dielectric function were revealed analyzing experimental ellipsometric data under the light of sample-air optical model. The band gap energy of the compound was determined as 3.34 eV from the analyses of absorption coefficient. Three critical points at 3.51, 4.10, and 4.71 eV were obtained from the analyses of components of dielectric function using their second-energy derivative spectra.Article Citation - WoS: 2Citation - Scopus: 2Analysis of Optical Constants and Temperature-Dependent Absorption Edge of Gas0.75se0.25< Layered Crystals(Pergamon-elsevier Science Ltd, 2017) Isik, Mehmet; Gasanly, NizamiGaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measurements in the wavelength range of 450-1000 nm. Derivative spectrophotometry analyses on temperature dependent transmittance spectra showed that band gap energies of the crystal increase from 239 eV (T=300 K) to 2.53 eV (T=10 K). Band gap at zero temperature, average phonon energy, electron phonon coupling parameter and rates of change of band gap energy with temperature were found from the temperature dependences of band gap energies under the light of different models reported in literature. Furthermore, the dispersion of room temperature refractive index was discussed in terms of single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, zero-frequency refractive index, were determined as a result of analyses. (C) 2017 Elsevier Ltd. All rights reserved.Article Citation - WoS: 14Citation - Scopus: 18Traps distribution in sol-gel synthesized ZnO nanoparticles(Elsevier, 2019) Delice, S.; Isik, M.; Gasanly, N. M.The distribution of shallow traps within the sol-gel synthesized ZnO nanoparticles was investigated using thermoluminescence (TL) experiments in the 10-300 K temperature range. TL measurements presented two overlapped peaks around 110 and 155 K. The experimental technique based on radiating the nanoparticles at different temperatures (T-exc.) between 60 and 125 K was carried out to understand the trap distribution characteristics of peaks. It was observed that peak maximum temperature shifted to higher values and activation energy (E-t) increased as irradiating temperature was increased. The E-t vs. T-exc. presented that ZnO nanoparticles have quasi-continuously distributed traps possessing activation energies increasing from 80 to 171 meV. (C) 2019 Elsevier B.V. All rights reserved.Article Citation - WoS: 8Citation - Scopus: 8Defect Characterization in Bi12geo20< Single Crystals by Thermoluminescence(Elsevier, 2021) Delice, S.; Isik, M.; Sarigul, N.; Gasanly, N. M.Bi12GeO20 single crystal grown by Czochralski method was investigated in terms of thermoluminescence (TL) properties. TL experiments were performed for various heating rates between 1 and 6 K/s in the temperature region of 300-675 K. One TL peak with peak maximum temperature of 557 K was observed in the TL spectrum as constant heating rate of 1 K/s was employed. Curve fitting, initial rise and variable heating rate methods were applied to calculate the activation energy of trap level corresponding to this TL peak. Analyses resulted in a presence of one trap center having mean activation energy of 0.78 eV. Heating rate characteristics of revealed trap center was also explored and theoretically well-known behavior that TL intensity decreases and peak maximum temperature increases with heating rates was observed for the trap level. Distribution of trapping levels was studied by thermally cleaning process for different T-stop between 425 and 525 K. Quasi-continuously distributed trapping levels were revealed with mean activation energies ranging from 0.78 to 1.26 eV. Moreover, absorption analysis revealed an optical transition taking place between a defect level and conduction band with an energy difference of 2.51 eV. These results are in good agreement for the presence of intrinsic defects above valence band in Bi12GeO20 crystals.Article Citation - WoS: 4Citation - Scopus: 5Thermoluminescence characteristics of GaSe and Ga2Se3 single crystals(Elsevier, 2022) Isik, M.; Sarigul, N.; Gasanly, N. M.GaSe and Ga2Se3 are semiconducting compounds formed from same constituent elements. These compounds have been attractive due to their optoelectronic and photovoltaic applications. Defects take remarkable attention since they affect quality of semiconductor devices. In the present paper, deep defect centers in GaSe and Ga2Se3 single crystals grown by Bridgman method were reported from the analyses of thermoluminescence measurements performed in the 350-675 K range. Experimental TL curves of GaSe and Ga2Se3 single crystals presented one and two overlapped peaks, respectively. The applied curve fitting and initial rise techniques were in good agreement about trap activation energies of 0.83 eV for GaSe, 0.96 and 1.24 eV for Ga2Se3 crystals. Crystalline structural properties of the grown single crystals were also investigated by x-ray diffraction measurements. The peaks observed in XRD patterns of the GaSe and Ga2Se3 crystals were well-consistent with hexagonal and zinc blende structures, respectively.Article Citation - WoS: 2Citation - Scopus: 2Temperature-Tuned Band Gap Energy and Oscillator Parameters of Gas0.5se0.5< Single Crystals(Elsevier Gmbh, Urban & Fischer verlag, 2016) Isik, Mehmet; Tugay, Evrin; Gasanly, NizamiTemperature-dependent transmission and room temperature reflection measurements were carried out on GaS0.5Se0.5 single crystal in the wavelength range of 380-1000 nm to investigate its optical parameters. The analysis of the temperature-dependent absorption data showed that direct and indirect band gap energies increase from 2.36 to 2.50 eV and 2.27 to 2.40 eV, respectively, as temperature is decreased from 300 to 10 K. The rates of change of the direct and indirect band gap energies with temperature was found around -7.4 x 10(-4) eV/K from the analysis of experimental data under the light of theoretical relation giving the band gap energy as a function of temperature. The absolute zero value of the band gap energies were also found from the same analysis as 2.50 eV (for direct) and 2.40 eV (for indirect). Wemple-DiDomenico single effective oscillator model, Sellmeier oscillator model and Spitzer-Fan model were used for the room temperature reflection data to find optical parameters of the crystal. (C) 2016 Elsevier GmbH. All rights reserved.Article Citation - WoS: 15Citation - Scopus: 16Investigation of Band Gap Energy Versus Temperature for Sns 2 Thin Films Grown by Rf-Magnetron Sputtering(Elsevier, 2020) Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.[No Abstract Available]Article Citation - WoS: 140Citation - Scopus: 140CaXH3 (X = Mn, Fe, Co) perovskite-type hydrides for hydrogen storage applications(Wiley, 2020) Surucu, Gokhan; Gencer, Aysenur; Candan, Abdullah; Gullu, Hasan H.; Isik, MehmetHydrogen storage is one of the attractive research interests in recent years due to the advantages of hydrogen to be used as energy source. The studies on hydrogen storage applications focus mainly on investigation of hydrogen storage capabilities of newly introduced compounds. The present paper aims at characterization of CaXH3 (X: Mn, Fe, or Co) perovskite-type hydrides for the first time to understand their potential contribution to the hydrogen storage applications. CaXH3 compounds have been investigated by density functional theory studies to reveal their various characteristics and hydrogen storage properties. CaXH3 compounds have been optimized in cubic crystal structure and the lattice constants of studied compounds have been obtained as 3.60, 3.50, and 3.48 angstrom for X: Mn, Fe, and Co compounds, respectively. The optimized structures have negative formation enthalpies pointing out that studied compounds are thermodynamically stable and could be synthesized experimentally. The gravimetric hydrogen storage densities of X: Mn, Fe, and Co compounds were found in as 3.09, 3.06, and 2.97 wt%, respectively. The revealed values for hydrogen storage densities indicate that CaXH3 compounds may be potential candidates for hydrogen storage applications. Moreover, various mechanical parameters of interest compounds like elastic constants, bulk modulus, and Poisson's ratio have been reported throughout the study. These compounds were found mechanically stable with satisfying Born stability criteria. Further analyses based on Cauchy pressure and Pugh criterion, showed that they have brittleness nature and relatively hard materials. In addition, the electronic characteristics, band structures, and associated partial density of states of CaXH3 hydrides have been revealed. The dynamic stability behavior of them was verified based on the phonon dispersion curves.Article Citation - WoS: 13Citation - Scopus: 14Linear and Nonlinear Optical Properties of Bi12geo20 Single Crystal for Optoelectronic Applications(Elsevier Sci Ltd, 2023) Isik, M.; Gasanly, N. M.The present paper aims at presenting linear and nonlinear optical properties of Bi12GeO20 single crystals grown by Czochralski method. Transmission and reflection measurements were performed in the 400-1000 nm region. The recorded spectra were analyzed considering well-known optical models. Spectral dependencies of absorption coefficient, skin depth, refractive index, real and imaginary components of dielectric function were presented. The analyses performed on absorption coefficient showed direct bandgap and Urbach energies as 2.56 and 0.22 eV, respectively. The first-and third-order nonlinear susceptibilities and nonlinear refractive index of the crystal were also reported in the present work. The results of the present paper would provide valuable information for optoelectronic device applications of Bi12GeO20.
