Işık, Mehmet

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https://hdl.handle.net/20.500.14411/8160
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Mehmet, Işık
M.,Işık
Isik, Mehmet
Mehmet, Isik
I., Mehmet
I.,Mehmet
Işık,M.
Isik,M.
I.,Mehmet
M.,Isik
Işık, Mehmet
M., Isik
Isik, M.
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Profesör Doktor
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mehmet.isik@atilim.edu.tr
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Department of Electrical & Electronics Engineering
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Scholarly Output

173

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169

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Optical Materials17
Physica B: Condensed Matter16
Journal of Luminescence15
Materials Science in Semiconductor Processing14
Journal of Materials Science: Materials in Electronics12
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Author: Işık, MehmetSubject: Ellipsometry

Scholarly Output Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Master Thesis
    Gas(x)se(1-x) Katmanlı Karışım Kristallerinin Yapısal ve Elipsometrik Özellikleri
    (2017) Habaibi, Om-alhana; Işık, Mehmet; Özkan, Filiz Korkmaz
    GaSxSe1-x katmanlı karışım kristalleri yapısal ve optiksel karakterizasyon teknikleri kullanılarak incelendi. Bridgman metodu ile büyütülen örneklerin yapısal karakterizasyonu x-ışını kırınımı (XRD), enerji saçılım spektroskopisi (EDS) ve Fourier transform kızılötesi spektroskopisi teknikleri kullanılarak başarıldı. Karışım kristallerinin kompozisyonal bağımlılığı EDS deneyleri ile elde edildi. Ölçümlerin sonuçları, kullanılan örneklerin x değerinin 0.25 aralıklar ile 0 ile 1 arasında olduğu kompozisyona denk geldiğini gösterdi. Örneklerin kristal yapısı XRD ölçümlerinin sonuçlarını ve analiz için bir yazılım programı kullanarak açığa çıkarıldı. FTIR tayfları x=0, 0.25 ve 0.50 kompozisyonlarındaki örneklerin içerisinde çoklu fonon emiliminin var olduğunu gösterdi. XRD ve FTIR deneylerinin sonuçları kullanılan kompozisyonlar arasında ilişkilendirildi. Örneklerin optiksel karakterizasyonu 1.2-6.0 eV spektral aralıpında gerçekleştirilen elipsometri deneyleri ile tamamlandı. Ölçüm sisteminin çıkış datası optiksel parametrelerin spektraş bağımlılığını gösteren dataya çevrildi. Elipsometrik data örneklerin bant boşluğu enerjilerini elde etmek için kullanıldı. Elde edilen bant enerjisi değerleri karışım kristallerinde sülfür kompozisyonu arttıkça bant enerjisinin 2.4 eV'tan (x = 0) 2.57 eV'a (x = 1) arttığını gösterdi. Ortaya çıkarılan bant enerji değerlerine göre bant boşluğu enerjisinin kompozisyona bağlılığını gösteren bir grafik çizildi.
  • Thumbnail Image
    Article
    Citation - WoS: 7
    Citation - Scopus: 7
    Interband Critical Points in Tlgax< Layered Mixed Crystals (0 ≤ x ≤ 1)
    (Elsevier Science Sa, 2013) Isik, M.; Işık, Mehmet; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    The layered semiconducting TlGaxIn1-xS2 mixed crystals (0 <= x <= 1) were studied by spectroscopic ellipsometry measurements in the 1.2-6.2 eV spectral range at room temperature. The spectral dependence of the components of the complex dielectric function, refractive index and extinction coefficient were revealed using an optical model. The interband transition energies in the studied samples were found from the analysis of the second-energy derivative spectra of the complex dielectric function. The variation of the obtained energies with composition were plotted to see the effect of the substitution of indium with gallium. Moreover, a simple diagram showing the revealed transitions in the available electronic band structure was given for TlGaS2 single crystals. (C) 2013 Elsevier B.V. All rights
  • Thumbnail Image
    Article
    Citation - WoS: 3
    Citation - Scopus: 2
    Characterization of Linear and Nonlinear Optical Properties of Nabi(wo4)2 Crystal by Spectroscopic Ellipsometry
    (Elsevier, 2024) Isik, M.; Işık, Mehmet; Guler, I.; Gasanly, N. M.; Işık, Mehmet; Department of Electrical & Electronics Engineering; Department of Electrical & Electronics Engineering
    NaBi(WO4)2 compound has been a material of considerable attention in optoelectronic applications. The present research, in which we examined the linear and nonlinear optical properties of NaBi(WO4)2 crystal using the spectroscopic ellipsometry method, elucidates the optical behavior of the crystal in detail. Our work provides a sensitive approach to determine the spectral characteristic of the crystal. The spectral dependence of various optical parameters such as refractive index, extinction coefficient, dielectric function and absorption coefficient was reported in the range of 1.2-5.0 eV. Optical values such as bandgap energy, critical point energy, single oscillator parameters were obtained as a result of the analyses. In addition to linear optical properties, we also investigated the nonlinear optical behavior of NaBi(WO4)2 and shed new light on the potential applications of the crystal. Absorbance and photoluminescence spectra of the crystal were also reported to characterize optical, electronic and emission behavior of the compound. Our findings may form the basis for a number of technological applications such as optoelectronic devices, frequency conversion, and optical sensors. This research contributes to a better understanding of the optical properties of NaBi(WO4)2 crystal, highlighting the material's role in future optical and electronic technologies.