Browsing by Author "Nazzal, Eman O."

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Citation Count: 0
Characterization of the Nanosandwiched Ga₂s_{3< Interfaces as Microwave Filters and Thermally Controlled Electric Switches}
(Elsevier Gmbh, 2018) Alharbi, S. R.; Qasrawı, Atef Fayez Hasan; Nazzal, Eman O.; Qasrawi, A. F.; Department of Electrical & Electronics Engineering
In this work, an indium layer of 50 nm thicknesses is sandwiched between two 500 nm thick Ga2S3 layers. The effect of indium nansandwiching on the composition, structure, morphology, light absorbability, capacitance and reactance spectra, and temperature dependent electrical conductivity of the Ga2S3 films are investigated by means of X-ray diffraction, scanning electron microscopy, energy dispersion X-ray spectroscopy, Raman spectroscopy, visible light spectrophotometry, impedance spectroscopy and current voltage characteristics. While the nansandwiched films are observed to exhibit an amorphous nature of structure with indium content of Owing to the nucleation mechanisms that take place during the film growth, the accumulation of some unit cells in groups to form grains should be a significant reason for the existence of many different sizes of grains in the nanosand-wiched films (Alharbi and Qasrawi, 2016). 0, the Raman spectra displayed three vibrational modes at 127.7,145.0 and 274.3 cm(-1). It was also observed that the indium insertion in the structure of the Ga2S3 shrinks the energy band gap by 0.18 eV. The nanosandwiched films are observed to exhibit a semiconductor metal (SM) transition at 310 K. The SM transition is associated with thermal hysteresis that exhibited a maximum value of 16% at 352 K. This behavior of the nanosandwiched films nominate it for use as thermally controlled electric switches. In addition, the impedance spectral analysis in the range of 10-1800 MHz has shown a capacitance tunability of more than 70%. The measurements of the wave trapping property displayed a bandpass/reject filter characteristics above 1.0 GHz which allow using the Ga2S3/In/Ga2S3 thin films as microwave resonator. (C) 2017 Elsevier GmbH. All rights reserved.
Citation Count: 4
Electrical Conductivity and Capacitance Spectra of Bi_1.37sm_{0.13< Pyrochlore Ceramic in the Range of 0-3 Ghz}
(World Scientific Publ Co Pte Ltd, 2014) Qasrawi, A. F.; Qasrawı, Atef Fayez Hasan; Bzour, Faten M.; Nazzal, Eman O.; Mergen, A.; Department of Electrical & Electronics Engineering
In this work, the electrical properties of samarium-doped bismuth niobium zinc oxide (Sm-doped BZN) pyrochlore ceramics are investigated by means of temperature dependent electrical conductivity and capacitance spectroscopy in the frequency range of 0-3 GHz. It was observed that the novel dielectric Sm-BZN ceramic exhibits a temperature and electric field dependent dielectric breakdown. When measured at 300 K, the breakdown electric field is 1.12 kV/cm and when heated the breakdown temperature is similar to 420 K. The pyrochlore is thermally active above 440K with conductivity activation energy of 1.37 eV. In addition, the room temperature capacitance spectra reflected a resonance-antiresonance switching property at 53MHz when subjected to an AC signal of low power of 5 dBm. Furthermore, when the Sm-BZN ceramics are used as microwave cavity and tested in the frequency range of 1.0-3.0 GHz, the cavity behaves as low pass filter with wide tunability up to a frequency of 1.91 GHz. At this frequency it behaves as a band rejection filter that blocks waves of 1.91 GHz and 2.57 GHz frequencies. These properties of the Sm-doped BZN are promising as they indicate the usability of the ceramics in digital electronic circuits as resonant microwave cavities suitable for the production of low pass/rejection band filters.
Citation Count: 14
Engineering the Optical and Dielectric Properties of the Ga₂s_{3< Nanosandwiches Via Indium Layer Thickness}
(Springer, 2018) Nazzal, Eman O.; Qasrawı, Atef Fayez Hasan; Qasrawi, A. F.; Alharbi, S. R.; Department of Electrical & Electronics Engineering
In this study, the effect of the nanosandwiched indium slab thickness (20-200 nm) on the performance of the Ga2S3/In/Ga2S3 interfaces is explored by means of X-ray diffraction, Raman spectroscopy, and optical spectroscopy techniques. The indium slab thickness which was varied in the range of 20-200 nm is observed to enhance the visible light absorbability of the Ga2S3 by 54.6 times, engineered the energy band gap in the range of 3.7-1.4 eV and increases the dielectric constant without, significantly, altering the structure of the Ga2S3. The broad range of the band gap tunability and the increased absorbability nominate the Ga2S3 thin films for photovoltaic applications. In addition, the dielectric spectral analysis and modeling have shown that a wide variety in the plasmon resonant frequency could be established within the Ga2S3/In/Ga2S3 trilayers. The plasmon frequency engineering in the range of 0.56-2.08 GHz which is associated with drift mobility of 12.58-5.76 cm(2)/Vs and electron scattering time at femtosecond level are promising for the production of broad band high frequency microwave filters.