Browsing by Author "Gasanly, N."
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Article Citation Count: 3Characteristic features of thermoluminescence in neodymium-doped gallium sulfide(Wiley, 2018) Işık, Mehmet; Isik, M.; Ahmedova, F.; Guseinov, A.; Gasanly, N.; Department of Electrical & Electronics EngineeringThe thermoluminescence (TL) of neodymium-doped gallium sulfide (GaS:Nd) single crystals was measured from 10 K to room temperature with various heating rates between 0.2 and 1.0 K/sec. Two peaks centered at 70.9 K and 116.0 K were observed when using a heating rate of 0.8 K/sec. Initial rise and curve fitting methods were used to obtain information on trap activation energies. Activation energies of 94 and 216 meV were found for two analyzable peaks. The heating rate dependencies of TL intensities revealed that one of the observed peaks showed normal behavior according to the one trap-one recombination model, whereas the other model showed anomalous heating rate behavior. TL experiments were also carried out at different illumination temperatures from 10 to 32 K; maximum peak temperature remained almost the same at various illumination temperatures. This behavior indicated that the revealed trapping centers are single, discrete levels. The TL glow curves of undoped GaS crystals were also investigated and the effect of Nd doping on the TL characteristics of crystals is discussed in the manuscript.Article Citation Count: 0Defect characterization of Ga4Se3S layered single crystals by thermoluminescence(indian Acad Sciences, 2016) Işık, Mehmet; Delice, S.; Gasanly, N.; Department of Electrical & Electronics EngineeringTrapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K/s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.Article Citation Count: 1Exploring the linear and nonlinear optical behavior of (TlInS2)0.75(TlInSe2)0.25: Insights from ellipsometry measurements(Elsevier, 2023) Işık, Mehmet; Guler, I.; Gasanly, N.; Department of Electrical & Electronics EngineeringThe search for layered structured new semiconductor materials with remarkable optical properties has become a driving force, especially for materials science. Tl2In2S3Se [(TlInS2)0.75(TlInSe2)0.25], a fascinating compound, holds great promise for advanced photonic and optoelectronic applications. In the present study, the linear and nonlinear optical properties of Tl2In2S3Se layered single crystals were studied by ellipsometry measurements. The variation of refractive index, extinction coefficient, absorption coefficient and skin depth with energy were investigated. Applying the derivative analysis technique to the absorption spectrum, indirect bandgap was found as 2.19 eV. The refractive index data was analyzed considering single-effective-oscillator model. The lattice dielectric constant, plasma frequency, carrier density to the effective mass ratio and zero-frequency refractive index were found. Moreover, the change in optical conductivity with energy yielded to determine the direct bandgap as 2.40 eV. The optical parameters of nonlinear refractive index, first-and third-order nonlinear susceptibilities were also reported.Article Citation Count: 0Growth and optical properties of (Na0.5Bi0.5)(Mo1-xWx)O4 (x=0.25) single crystal: a potential candidate for optoelectronic devices(Springer, 2024) Işık, Mehmet; Isik, M.; Gasanly, N.; Department of Electrical & Electronics EngineeringDouble tungstates (DT) and double molybdates (DM) have significant importance because of their optoelectronic applications. Regarding the importance of DT and DM, we investigated experimentally structural and optical properties of (Na0.5Bi0.5)(Mo1-xWx)O-4 (x = 0.25) crystal that belongs to the NaBi-DT and DM crystals group. Czochralski method was used to grow the single crystals. The structure of the crystal was identified using X-ray diffraction (XRD) measurements. Two sharp peaks associated with tetragonal crystal structure appeared in the pattern. Vibrational modes of the studied crystal were obtained from the Raman experiments. By the help of the Fourier transform infrared spectrophotometer (FTIR) measurements, infrared transmittance spectrum of the studied compound was recorded. Band gap energy wase found around 3.04 eV using two methods, Tauc and derivative analysis, based on transmission spectrum. Based on the analysis of absorption coefficient, Urbach energy was obtained as 0.22 eV. The revealed structural and optical properties of the crystal indicated that the material may be a candidate for optoelectronic devices in which NaBi(MoO4)(2) and NaBi(WO4)(2) materials are utilized.Article Citation Count: 2Optical characterization of (TlInS2)0.5(TlInSe2)0.5 crystal by ellipsometry: linear and optical constants for optoelectronic devices(Springer, 2023) Işık, Mehmet; Isik, M.; Gasanly, N.; Department of Electrical & Electronics EngineeringTlInSSe [(TlInS2)(0.5)(TlInSe2)(0.5)] crystals have garnered significant attention as promising candidates for optoelectronic applications due to their exceptional optoelectrical characteristics. This study focused on investigating the linear and nonlinear optical properties of TlInSSe layered single crystals through ellipsometry measurements. The X-ray diffraction analysis revealed the presence of four distinct peaks corresponding to a monoclinic crystalline structure. In-depth analysis was conducted to examine the variations of refractive index, extinction coefficient, and complex dielectric function within the energy range of 1.25-6.15 eV. By employing derivative analysis of the absorption coefficient and utilizing the Tauc relation, the indirect and direct bandgap energies of TlInSSe crystals were determined to be 2.09 and 2.26 eV, respectively. Furthermore, this research paper presents findings on oscillator energy, dispersion energy, Urbach energy, zero and high frequency dielectric constants, plasma frequency, carrier density to effective mass ratio, nonlinear refractive index, and first-order and third-order nonlinear susceptibilities of TlInSSe crystals.Article Citation Count: 0Spectroscopic ellipsometry studies of optical properties of TlIn(S0.25Se0.75)2 crystal(Springer Heidelberg, 2023) Işık, Mehmet; Isik, M.; Gasanly, N.; Department of Electrical & Electronics EngineeringThe optical properties of TlIn(S0.25Se0.75)(2) crystals were studied by ellipsometry measurements. X-ray diffraction pattern presented well-defined peaks associated with monoclinic structure. Energy dependent graphs of various linear optical parameters of the crystal were presented in the 1.25-4.50 eV range. The band gap and Urbach energies of the compound were found as 1.96 and 0.68 eV, respectively, from the analyses of the absorption coefficient. Refractive index spectrum was analyzed considering the single-effective-oscillator model to get oscillator and dispersion energies, zero and high frequency dielectric constants, plasma frequency. Moreover, the nonlinear refractive index, first-order and third-order nonlinear susceptibilities of TlIn(S0.25Se0.75)(2) crystal were revealed in the present paper.Article Citation Count: 1Structural and optical properties of (TlInS2)0.75(TlInSe2)0.25 thin films deposited by thermal evaporation(Springer, 2023) Işık, Mehmet; Isik, M.; Gasanly, N.; Department of Electrical & Electronics EngineeringLayered semiconductor materials have become a serious research topic in recent years, thanks to their effective optical properties. In this article, the thin-film structure of Tl2In2S3Se [(TlInS2)(0.75)(TlInSe2)(0.25)] material with layered structure was grown by thermal evaporation method. The structural, morphological, and optical properties of the deposited thin films were examined. X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS) and atomic force microscopy (AFM) techniques were used to get information about structural and morphological properties of the thin films. XRD pattern presented well-defined peaks associated with monoclinic crystalline structure. The crystallite size, dislocation density, and lattice strain of the films were also obtained from the analyses of XRD pattern. EDS analysis showed that atomic compositional ratios of the Tl, In, S, and Se elements are consistent with chemical formula of Tl2In2S3Se. The optical characterization of thin film was performed using transmission and Raman spectroscopy techniques. Raman spectrum offered information about the vibrational modes of the thin film. The analyses of the transmission spectrum presented the indirect and direct band gap energies of the Tl2In2S3Se thin film as 2.23 and 2.52 eV, respectively. The further analyses on the absorption coefficient resulted in Urbach energy of 0.58 eV.Article Citation Count: 5Thermoluminescence in gallium sesquisulfide single crystals: usual and unusual heating rate dependencies(Elsevier Gmbh, 2018) Işık, Mehmet; Isik, M.; Gasanova, L.; Mahammadov, A.; Gasanly, N.; Department of Electrical & Electronics EngineeringThermoluminescence (TL) experiments were conducted for Ga2S3 crystals to obtain information about trapping parameters. TL measurements were performed from 10 to 300 K with varying heating rates in the range of 0.2-0.8 K/s. Two TL glow peaks centered at 44K (peak A) and 91 K (peak B) were observed at heating rate of beta=0.5 K/s. For peak A, TL intensity decreased whereas that for peak B increased with elevating the heating rates that means anomalous heating rate occurred for peak B. TL glow curves were analyzed using initial rise method to find activation energies of traps. Distribution of trap centers was investigated using T-max - T-stop method. Quasi-continuous distributions with increasing activation energies from 40 to 135 meV and 193 to 460 meV were attributed to trap centers A and B, respectively. (C) 2018 Elsevier GmbH. All rights reserved.