Determination of Optical Constants and Temperature Dependent Band Gap Energy of Gas<sub>0.25</Sub>se<sub>0.75< Single Crystals

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2017

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Natl inst Optoelectronics

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Optical properties of GaS0.25Se0.75 single crystals were investigated by means of temperature -dependent transmission and room temperature reflection experiments. Derivative spectrophotometry analysis showed that indirect band gap energies of the crystal increase from 2.13 to 2.26 eV as temperature is decreased from 300 to 10 K. Temperature dependence of band gap energy was fitted under the light of theoretical expression. The band gap energy change with temperature and absolute zero value of the band gap energy were found from the analyses. The Wemple-DiDomenico single effective oscillator model and Sellmeier oscillator model were applied to the spectral dependence of room temperature refractive index to find optical parameters of the GaS0.25Se0.75 crystal. Chemical composition of the crystal was determined using the energy dispersive spectral measurements.

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Isik, Mehmet/0000-0003-2119-8266

Keywords

Semiconductors, Band gap energy, Refractive index

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Q4

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Q4

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Volume

19

Issue

5-6

Start Page

374

End Page

378

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