Browsing by Author "Babayeva, R. F."

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Citation - WoS: 14
Citation - Scopus: 15
Structural and Optical Properties of Ga₂se_{3< Crystals by Spectroscopic Ellipsometry}
(Springer, 2019) Guler, I.; Isik, M.; Gasanly, N. M.; Gasanova, L. G.; Babayeva, R. F.
Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.
Citation - WoS: 6
Citation - Scopus: 6
Vibrational Modes in (tlgas₂)_{x< Crystals by Raman Measurements: Compositional Dependence of the Mode Frequencies and Line-Shapes}
(Springer, 2020) Isik, M.; Terlemezoglu, M.; Gasanly, N. M.; Babayeva, R. F.
TlGaS(2)and TlGaSe(2)ternary semiconducting compounds have been of scientific interest due to their large ultrafast optical nonlinearity characteristics. These remarkable properties make them promising semiconducting materials in photonic applications. A series of (TlGaS2)(x)-(TlGaSe2)(1-x)layered mixed crystals grown by Bridgman method were investigated from the standpoint of their Raman spectroscopy characteristics. Experimental Raman scattering study of crystals were reported in the frequency range of 80-400 cm(-1)for compositions ofx = 0, 0.25, 0.50, 0.75 and 1.0. The effects of crystal disorder on the line-width broadening of Raman-active modes were studied in detail. The asymmetry in the Raman line-shape was analyzed for two highest-frequency intralayer mode presenting two-mode behavior. It was shown that mixed crystal disorder effect is the major source for change of Raman line-shape with composition.