Photon Assisted Hopping Conduction Mechanism in Tl<sub>2</Sub>sse Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid 6603962677
dc.authorscopusid 55934582000
dc.authorscopusid 56447017100
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Ziqan, Abdelhalim M.
dc.contributor.author Jazzar, Suha Kh.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T14:31:29Z
dc.date.available 2024-07-05T14:31:29Z
dc.date.issued 2015
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Arab Amer Univ, Dept Math, Jenin 240, Israel; [Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Arab Amer Univ, Dept Stat, Jenin 240, Israel; [Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686 en_US
dc.description.abstract In this article, the powder X-ray diffraction data and the dark and the photo-excited electrical conduction parameters of Tl2SSe crystal are reported. The dark and photon excited electrical conduction in the tetragonal crystal are found to be dominated by thermionic emission assisted variable range hopping conduction (VRH). The dark Molt's VRH parameters representing by the degree of disorder (T), the density of localized states near the Fermi level (N(E-F)), the average hopping range (R) and average hopping energy (W) exhibited wide tunability via incremental photon intensity. Particularly, while the dark values of T-0, W and R significantly decreased from 2.32x 10(8) to 1.52x10(5) K, 114 to 18.25 meV and from 66.15 to 10.58 A, respectively, the values of N(E-F) increased from 7.23 x 10(18) to 1.10 x 10(22) cm(-3)/eV when the crystal was photo-excited with a 53.6 mW/cm(2) light intensity. These variations in the hopping parameters via photon excitations are promisig for using the crystal in the fabrication of well controlled, widely tunable, low energy consuming and highly efficient electronic devices. (C) 2014 Elsevier B.V. All rights reserved en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1016/j.physb.2014.11.038
dc.identifier.endpage 154 en_US
dc.identifier.issn 0921-4526
dc.identifier.issn 1873-2135
dc.identifier.scopus 2-s2.0-84917693009
dc.identifier.startpage 149 en_US
dc.identifier.uri https://doi.org/10.1016/j.physb.2014.11.038
dc.identifier.uri https://hdl.handle.net/20.500.14411/692
dc.identifier.volume 458 en_US
dc.identifier.wos WOS:000346845300025
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Elsevier Science Bv en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 3
dc.subject Hopping en_US
dc.subject Mixed conduction en_US
dc.subject Thennionic en_US
dc.subject Tl2SSe en_US
dc.title Photon Assisted Hopping Conduction Mechanism in Tl<sub>2</Sub>sse Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 3
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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