Photon Assisted Hopping Conduction Mechanism in Tl<sub>2</Sub>sse Crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid6603962677
dc.authorscopusid55934582000
dc.authorscopusid56447017100
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorZiqan, Abdelhalim M.
dc.contributor.authorJazzar, Suha Kh.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:31:29Z
dc.date.available2024-07-05T14:31:29Z
dc.date.issued2015
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Arab Amer Univ, Dept Math, Jenin 240, Israel; [Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Arab Amer Univ, Dept Stat, Jenin 240, Israel; [Qasrawi, A. F.; Ziqan, Abdelhalim M.; Jazzar, Suha Kh.] Atilim Univ, Grp Phys, Fac Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractIn this article, the powder X-ray diffraction data and the dark and the photo-excited electrical conduction parameters of Tl2SSe crystal are reported. The dark and photon excited electrical conduction in the tetragonal crystal are found to be dominated by thermionic emission assisted variable range hopping conduction (VRH). The dark Molt's VRH parameters representing by the degree of disorder (T), the density of localized states near the Fermi level (N(E-F)), the average hopping range (R) and average hopping energy (W) exhibited wide tunability via incremental photon intensity. Particularly, while the dark values of T-0, W and R significantly decreased from 2.32x 10(8) to 1.52x10(5) K, 114 to 18.25 meV and from 66.15 to 10.58 A, respectively, the values of N(E-F) increased from 7.23 x 10(18) to 1.10 x 10(22) cm(-3)/eV when the crystal was photo-excited with a 53.6 mW/cm(2) light intensity. These variations in the hopping parameters via photon excitations are promisig for using the crystal in the fabrication of well controlled, widely tunable, low energy consuming and highly efficient electronic devices. (C) 2014 Elsevier B.V. All rights reserveden_US
dc.identifier.citation2
dc.identifier.doi10.1016/j.physb.2014.11.038
dc.identifier.endpage154en_US
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-84917693009
dc.identifier.startpage149en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2014.11.038
dc.identifier.urihttps://hdl.handle.net/20.500.14411/692
dc.identifier.volume458en_US
dc.identifier.wosWOS:000346845300025
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHoppingen_US
dc.subjectMixed conductionen_US
dc.subjectThennionicen_US
dc.subjectTl2SSeen_US
dc.titlePhoton Assisted Hopping Conduction Mechanism in Tl<sub>2</Sub>sse Crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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