Photon assisted hopping conduction mechanism in Tl<sub>2</sub>SSe crystals

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Date

2015

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Elsevier Science Bv

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

In this article, the powder X-ray diffraction data and the dark and the photo-excited electrical conduction parameters of Tl2SSe crystal are reported. The dark and photon excited electrical conduction in the tetragonal crystal are found to be dominated by thermionic emission assisted variable range hopping conduction (VRH). The dark Molt's VRH parameters representing by the degree of disorder (T), the density of localized states near the Fermi level (N(E-F)), the average hopping range (R) and average hopping energy (W) exhibited wide tunability via incremental photon intensity. Particularly, while the dark values of T-0, W and R significantly decreased from 2.32x 10(8) to 1.52x10(5) K, 114 to 18.25 meV and from 66.15 to 10.58 A, respectively, the values of N(E-F) increased from 7.23 x 10(18) to 1.10 x 10(22) cm(-3)/eV when the crystal was photo-excited with a 53.6 mW/cm(2) light intensity. These variations in the hopping parameters via photon excitations are promisig for using the crystal in the fabrication of well controlled, widely tunable, low energy consuming and highly efficient electronic devices. (C) 2014 Elsevier B.V. All rights reserved

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Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686

Keywords

Hopping, Mixed conduction, Thennionic, Tl2SSe

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2

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Volume

458

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Start Page

149

End Page

154

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