Ellipsometric study of optical properties of GaS<sub>x</sub>Se<sub>1-x</sub> layered mixed crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authorscopusid23766993100
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.contributor.authorIşık, Mehmet
dc.contributor.authorGasanly, Nizami
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:29:17Z
dc.date.available2024-07-05T14:29:17Z
dc.date.issued2016
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, Mehmet] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, Nizami] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, Nizami] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijanen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686en_US
dc.description.abstractSpectroscopic ellipsometry measurements were performed on GaSxSe1-x mixed crystals (0 <= x <= 1) in the 1.2-6.2 eV range. Spectral dependence of optical parameters; real and imaginary components of pseudodielectric function, pseudorefractive index and pseudoextinction coefficient were reported in the present work. Critical point (CP) analyses on second-energy derivative spectra of the pseudodielectric function were accomplished to find the interband transition energies. The revealed energy values were associated with each other taking into account the fact that band gap energy of mixed crystals rises with increase in sulfur content. The variation of CP energies with composition (x) was also plotted. Peaks in the spectra of studied optical parameters and CP energy values were observed to be shifted to higher energy values as sulfur concentration is increased in the mixed crystals. (C) 2016 Elsevier B.V. All rights reserved.en_US
dc.identifier.citation10
dc.identifier.doi10.1016/j.optmat.2016.02.034
dc.identifier.endpage159en_US
dc.identifier.issn0925-3467
dc.identifier.issn1873-1252
dc.identifier.scopus2-s2.0-84959343073
dc.identifier.startpage155en_US
dc.identifier.urihttps://doi.org/10.1016/j.optmat.2016.02.034
dc.identifier.urihttps://hdl.handle.net/20.500.14411/497
dc.identifier.volume54en_US
dc.identifier.wosWOS:000373866400024
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSemiconductorsen_US
dc.subjectEllipsometryen_US
dc.subjectOptical parametersen_US
dc.titleEllipsometric study of optical properties of GaS<sub>x</sub>Se<sub>1-x</sub> layered mixed crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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