Analysis of the Hall Effect in Tlgate<sub>2</Sub> Single Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Qasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid 6603962677
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.authorwosid Qasrawi, Atef Fayez/R-4409-2019
dc.contributor.author Qasrawi, A. F.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:11:52Z
dc.date.available 2024-07-05T15:11:52Z
dc.date.issued 2009
dc.department Atılım University en_US
dc.department-temp [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, W Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 en_US
dc.description.abstract The electrical resistivity and Hall coefficient of p-type TlGaTe2 crystals were measured in the temperature range of 110-320 K. The electrical resistivity, charge carrier density and Hall mobility data for the crystals have been analyzed by means of existing theories and models to determine the extrinsic energy levels, the carrier effective mass, the donor and acceptor concentrations and the dominant scattering mechanism in the crystal as well. The analysis of the temperature-dependent electrical resistivity recorded parallel and perpendicular to the crystal's axis ( c-axis) reflected the existence of energy levels located at 0.26 and at 0.20 eV, respectively. The difference of these two energy levels is due to crystal anisotropy. The energy level at 0.26 eV was found to represent an acceptor level, as confirmed from Hall data analysis. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis revealed the carrier effective mass and the acceptor and donor concentrations as 0.73m(0), 4.10 x 10(17) cm(-3) and 1.20 x 10(17) cm(-3), respectively. The Hall mobility of TlGaTe2 is found to be limited by the scattering of hole-acoustic phonon interactions. The calculated theoretical mobility fits to the experimental one under the condition that the acoustic deformation potential is 11.0 eV, which is the energy position of the top of valence band maximum that is formed by the Te 5s states. en_US
dc.identifier.citationcount 6
dc.identifier.doi 10.1088/0953-8984/21/23/235802
dc.identifier.issn 0953-8984
dc.identifier.issn 1361-648X
dc.identifier.issue 23 en_US
dc.identifier.pmid 21825596
dc.identifier.scopus 2-s2.0-66349126227
dc.identifier.uri https://doi.org/10.1088/0953-8984/21/23/235802
dc.identifier.uri https://hdl.handle.net/20.500.14411/1507
dc.identifier.volume 21 en_US
dc.identifier.wos WOS:000266581200022
dc.identifier.wosquality Q3
dc.institutionauthor Qasrawı, Atef Fayez Hasan
dc.language.iso en en_US
dc.publisher Iop Publishing Ltd en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 8
dc.subject [No Keyword Available] en_US
dc.title Analysis of the Hall Effect in Tlgate<sub>2</Sub> Single Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 6
dspace.entity.type Publication
relation.isAuthorOfPublication 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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