Trapping Center Parameters in In<sub>6</Sub>s<sub>7< Crystals

dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Gasanly, Nizami/0000-0002-3199-6686
dc.authorid Isik, Mehmet/0000-0003-2119-8266
dc.authorscopusid 23766993100
dc.authorscopusid 35580905900
dc.authorwosid Gasanly, Nizami/HRE-1447-2023
dc.authorwosid Gasanly, Nizami/ABA-2249-2020
dc.contributor.author Isik, M.
dc.contributor.author Gasanly, N. M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:10:54Z
dc.date.available 2024-07-05T15:10:54Z
dc.date.issued 2011
dc.department Atılım University en_US
dc.department-temp [Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey en_US
dc.description Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266 en_US
dc.description.abstract Thermally stimulated current measurements were carried out on In6S7 single crystals in the temperature range of 10-225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c-axis of crystals. The analysis of the glow curve according to various methods, such as curve fitting, initial rise and peak shape methods, gives results in good agreement with each other and revealed two trapping centers in In6S7 with activation energies of 157 and 290 meV. Their capture cross sections have been determined as 7.5 x 10(-23) and 7.1 x 10(-20) cm(2),respectively. The good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping has confirmed that retrapping is negligible in these centers. (C) 2011 Elsevier B.V. All rights reserved. en_US
dc.identifier.citationcount 2
dc.identifier.doi 10.1016/j.physb.2011.04.008
dc.identifier.endpage 2653 en_US
dc.identifier.issn 0921-4526
dc.identifier.issue 13 en_US
dc.identifier.scopus 2-s2.0-79957608362
dc.identifier.startpage 2650 en_US
dc.identifier.uri https://doi.org/10.1016/j.physb.2011.04.008
dc.identifier.uri https://hdl.handle.net/20.500.14411/1355
dc.identifier.volume 406 en_US
dc.identifier.wos WOS:000291973000031
dc.institutionauthor Işık, Mehmet
dc.language.iso en en_US
dc.publisher Elsevier Science Bv en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 2
dc.subject Semiconductors en_US
dc.subject Chalcogenides en_US
dc.subject Defects en_US
dc.subject Electrical properties en_US
dc.title Trapping Center Parameters in In<sub>6</Sub>s<sub>7< Crystals en_US
dc.type Article en_US
dc.wos.citedbyCount 2
dspace.entity.type Publication
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