Improvement of Electrical Characteristics of Snse/Si Heterostructure by Integration of Si Nanowires

dc.authorid Coskun, Emre/0000-0002-6820-3889
dc.authorscopusid 16028137400
dc.authorscopusid 36766075800
dc.authorscopusid 57204953639
dc.authorscopusid 7003589218
dc.authorwosid GULLU, HASAN HUSEYIN/F-7486-2019
dc.authorwosid Coskun, Emre/K-3786-2018
dc.contributor.author Coskun, E.
dc.contributor.author Gullu, H. H.
dc.contributor.author Emir, C.
dc.contributor.author Parlak, M.
dc.contributor.other Department of Electrical & Electronics Engineering
dc.date.accessioned 2024-07-05T15:18:37Z
dc.date.available 2024-07-05T15:18:37Z
dc.date.issued 2021
dc.department Atılım University en_US
dc.department-temp [Coskun, E.] Canakkale Onsekiz Mart Univ, Dept Phys, TR-17100 Canakkale, Turkey; [Gullu, H. H.; Emir, C.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Parlak, M.] Middle East Tech Univ METU, Dept Phys, TR-06800 Ankara, Turkey; [Parlak, M.] METU, Ctr Solar Energy Res & Applicat GUNAM, TR-06800 Ankara, Turkey en_US
dc.description Coskun, Emre/0000-0002-6820-3889 en_US
dc.description.abstract In this study, the effects of the nanowire geometry on Si wafer substrate were investigated for the SnSe/Si-nanowire heterojunction device and the obtained results were compared with the one fabricated on planar Si surface. Nanowires on Si surface were produced by metal-assisted etching method and the SnSe film layer was deposited by thermal evaporation technique. On both Si and glass surfaces, deposited film shows polycrystalline and single SnSe phase. From optical transmission measurements, optical band gap of this film was determined as 1.36 eV in a good agreement with the literature. All SnSe/Si heterostructures were found in a p-n diode behavior and the ideality factor and series resistance values were calculated as 2.40, 547 Omega, and 3.71, 1.57 x 10(3) Omega, for SnSe/Si-nanowire and SnSe/Si heterojunctions, respectively. As a result, an improvement in device characteristics concerning the planar Si structure was found by utilizing Si nanowire structure. en_US
dc.description.sponsorship Canakkale Onsekiz Mart University, The Scientific Research Coordination Unit [FBA-2019-2902] en_US
dc.description.sponsorship This work was supported by Canakkale Onsekiz Mart University, The Scientific Research Coordination Unit, Project Number FBA-2019-2902. en_US
dc.identifier.citationcount 4
dc.identifier.doi 10.1016/j.physb.2020.412669
dc.identifier.issn 0921-4526
dc.identifier.issn 1873-2135
dc.identifier.scopus 2-s2.0-85095823824
dc.identifier.uri https://doi.org/10.1016/j.physb.2020.412669
dc.identifier.uri https://hdl.handle.net/20.500.14411/1877
dc.identifier.volume 604 en_US
dc.identifier.wos WOS:000612469900004
dc.institutionauthor Güllü, Hasan Hüseyin
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.relation.publicationcategory Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı en_US
dc.rights info:eu-repo/semantics/closedAccess en_US
dc.scopus.citedbyCount 5
dc.subject Nanowire en_US
dc.subject Heterojunction en_US
dc.subject SnSe en_US
dc.subject Thin film en_US
dc.title Improvement of Electrical Characteristics of Snse/Si Heterostructure by Integration of Si Nanowires en_US
dc.type Article en_US
dc.wos.citedbyCount 5
dspace.entity.type Publication
relation.isAuthorOfPublication d69999a1-fdfb-496f-8b4e-a9fa9b68b35a
relation.isAuthorOfPublication.latestForDiscovery d69999a1-fdfb-496f-8b4e-a9fa9b68b35a
relation.isOrgUnitOfPublication c3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscovery c3c9b34a-b165-4cd6-8959-dc25e91e206b

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