Temperature-Dependent Capacitance-Voltage Biasing of the Highly Tunable Tlgate<sub>2</Sub> Crystals

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dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid6603962677
dc.authorscopusid35580905900
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorGasanly, N. M.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:33:04Z
dc.date.available2024-07-05T14:33:04Z
dc.date.issued2012
dc.departmentAtılım Universityen_US
dc.department-temp[Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, Ankara 06800, Turkeyen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975en_US
dc.description.abstractThe temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.identifier.citationcount2
dc.identifier.doi10.1016/j.physb.2012.04.020
dc.identifier.endpage2752en_US
dc.identifier.issn0921-4526
dc.identifier.issue14en_US
dc.identifier.scopus2-s2.0-84861345190
dc.identifier.startpage2749en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2012.04.020
dc.identifier.urihttps://hdl.handle.net/20.500.14411/874
dc.identifier.volume407en_US
dc.identifier.wosWOS:000305468000018
dc.institutionauthorQasrawı, Atef Fayez Hasan
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofInternational Workshop on Positron Studies of Defects (PSD) -- AUG 28-SEP 02, 2011 -- Delft Univ Technol, Delft, NETHERLANDSen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.scopus.citedbyCount2
dc.subjectVaractoren_US
dc.subjectTlGaSe2en_US
dc.subjectCapacitanceen_US
dc.subjectBarrier heighten_US
dc.titleTemperature-Dependent Capacitance-Voltage Biasing of the Highly Tunable Tlgate<sub>2</Sub> Crystalsen_US
dc.typeConference Objecten_US
dc.wos.citedbyCount2
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
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relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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