Temperature-Dependent Capacitance-Voltage Biasing of the Highly Tunable Tlgate<sub>2</Sub> Crystals
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorid | Gasanly, Nizami/0000-0002-3199-6686 | |
| dc.authorid | Qasrawi, Atef Fayez/0000-0001-8193-6975 | |
| dc.authorscopusid | 6603962677 | |
| dc.authorscopusid | 35580905900 | |
| dc.authorwosid | Gasanly, Nizami/ABA-2249-2020 | |
| dc.authorwosid | Gasanly, Nizami/HRE-1447-2023 | |
| dc.authorwosid | Qasrawi, Atef Fayez/R-4409-2019 | |
| dc.contributor.author | Qasrawi, A. F. | |
| dc.contributor.author | Gasanly, N. M. | |
| dc.contributor.other | Department of Electrical & Electronics Engineering | |
| dc.date.accessioned | 2024-07-05T14:33:04Z | |
| dc.date.available | 2024-07-05T14:33:04Z | |
| dc.date.issued | 2012 | |
| dc.department | Atılım University | en_US |
| dc.department-temp | [Qasrawi, A. F.] Atilim Univ, Fac Engn, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Arab Amer Univ, Dept Phys, Jenin, West Bank, Israel; [Gasanly, N. M.] Middle E Tech Univ, Dept Phys, Ankara 06800, Turkey | en_US |
| dc.description | Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975 | en_US |
| dc.description.abstract | The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.citationcount | 2 | |
| dc.identifier.doi | 10.1016/j.physb.2012.04.020 | |
| dc.identifier.endpage | 2752 | en_US |
| dc.identifier.issn | 0921-4526 | |
| dc.identifier.issue | 14 | en_US |
| dc.identifier.scopus | 2-s2.0-84861345190 | |
| dc.identifier.startpage | 2749 | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.physb.2012.04.020 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14411/874 | |
| dc.identifier.volume | 407 | en_US |
| dc.identifier.wos | WOS:000305468000018 | |
| dc.institutionauthor | Qasrawı, Atef Fayez Hasan | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Science Bv | en_US |
| dc.relation.ispartof | International Workshop on Positron Studies of Defects (PSD) -- AUG 28-SEP 02, 2011 -- Delft Univ Technol, Delft, NETHERLANDS | en_US |
| dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
| dc.rights | info:eu-repo/semantics/closedAccess | en_US |
| dc.scopus.citedbyCount | 2 | |
| dc.subject | Varactor | en_US |
| dc.subject | TlGaSe2 | en_US |
| dc.subject | Capacitance | en_US |
| dc.subject | Barrier height | en_US |
| dc.title | Temperature-Dependent Capacitance-Voltage Biasing of the Highly Tunable Tlgate<sub>2</Sub> Crystals | en_US |
| dc.type | Conference Object | en_US |
| dc.wos.citedbyCount | 2 | |
| dspace.entity.type | Publication | |
| relation.isAuthorOfPublication | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
| relation.isAuthorOfPublication.latestForDiscovery | 1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c | |
| relation.isOrgUnitOfPublication | c3c9b34a-b165-4cd6-8959-dc25e91e206b | |
| relation.isOrgUnitOfPublication.latestForDiscovery | c3c9b34a-b165-4cd6-8959-dc25e91e206b |