Temperature-Dependent Capacitance-Voltage Biasing of the Highly Tunable Tlgate<sub>2</Sub> Crystals

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2012

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Elsevier Science Bv

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Department of Electrical & Electronics Engineering
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Abstract

The temperature effects on the capacitance-voltage characteristics as well as the room temperature capacitance-frequency characteristics of TlGaTe2 crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 mu F to 60 pF was recorded. The capacitance-voltage characteristics, being recorded in the temperature range of 290-380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values ( similar to 10(3)) make the TlGaTe2 crystals applicable in microelectronic components. (C) 2012 Elsevier B.V. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo
Qasrawi, Atef Fayez ORCID logo

Keywords

Varactor, TlGaSe2, Capacitance, Barrier height

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International Workshop on Positron Studies of Defects (PSD) -- AUG 28-SEP 02, 2011 -- Delft Univ Technol, Delft, NETHERLANDS

Volume

407

Issue

14

Start Page

2749

End Page

2752

URI

https://doi.org/10.1016/j.physb.2012.04.020
 https://hdl.handle.net/20.500.14411/874

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