Physical properties of the Bi<sub>1.5</sub>Zn<sub>0.92-2<i>x</i></sub>Hf<i><sub>x</sub></i>Nb<sub>1.5</sub>O<sub>6.92</sub> solid solutions

dc.authoridQasrawi, Atef Fayez/0000-0001-8193-6975
dc.authorscopusid36909456400
dc.authorscopusid6603962677
dc.authorscopusid7003266747
dc.authorwosidQasrawi, Atef Fayez/R-4409-2019
dc.contributor.authorQasrawı, Atef Fayez Hasan
dc.contributor.authorQasrawi, A. F.
dc.contributor.authorMergen, A.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T14:29:14Z
dc.date.available2024-07-05T14:29:14Z
dc.date.issued2016
dc.departmentAtılım Universityen_US
dc.department-temp[Al Garni, S. E.] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah 21413, Saudi Arabia; [Qasrawi, A. F.] AAUJ, Grp Phys, TR-06836 Ankara, Turkey; [Qasrawi, A. F.] Atilim Univ, Fac Engn, TR-06836 Ankara, Turkey; [Mergen, A.] Marmara Univ, Met & Mat Engn Dept, TR-34722 Istanbul, Turkeyen_US
dc.descriptionQasrawi, Atef Fayez/0000-0001-8193-6975en_US
dc.description.abstractThe Hf doping effect on the structural, compositional, optical, electrical and dielectric properties of the bismuth-zinc-niobium oxide pyrochlore ceramics is explored by means of scanning electron microscopy, energy dispersive X-ray spectroscopy, ultraviolet-visible light spectroscopy in the wavelength range of 200-1100 nm, temperature dependent electrical resistivity measurements in the range of 300-460 K and dielectric spectroscopy in the frequency range of 0.1-1.0 GHz. The optimum solubility limit in the Bi1.5Zn0.92-2xHfxNb1.5O6.92 solid solution is observed for the Hf content of 0.06. Increasing the Hf content from 0.03 to 0.06 decreased the room temperature, lattice constant, strain, dislocation density, optical energy band gap and electrical resistivity. It also increased the crystallite size and the dielectric constant. The energy band gap of the pure BZN (3.30 eV) decreased to 2.21 and reached 2.10 eV as the Hf content increased from 0.03 to 0.06. This behavior of the BZN suggests its suitability for optical applications of the visible region of light like photovoltaic devices. In addition, the remarkable increase in the dielectric constant from 258 to 280 and 456 nominates the Hf doped pyrochlore for passive mode operation devices like microwave capacitors. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.en_US
dc.description.sponsorshipSRC-AAUJ; TUBITAK [FEN-E-120613-0266]; DSR-KAU [159-363-1436-G]en_US
dc.description.sponsorshipThe authors would like to thank the scientific research council of Arab American University (SRC-AAUJ) at Palestine, the scientific and technological research council of Turkey (TUBITAK) and the deanship of Scientific Research (DSR-KAU) at King Abdulaziz University, Jaddah as the work was supported by the SRC-AAUJ under the project code (2014-2015 Cycle II), TUBITAK under the project FEN-E-120613-0266 and by the DSR-KAU under the Grant number 159-363-1436-G, respectively.en_US
dc.identifier.citation6
dc.identifier.doi10.1016/j.ceramint.2015.10.131
dc.identifier.endpage3379en_US
dc.identifier.issn0272-8842
dc.identifier.issn1873-3956
dc.identifier.issue2en_US
dc.identifier.scopus2-s2.0-85042781403
dc.identifier.startpage3372en_US
dc.identifier.urihttps://doi.org/10.1016/j.ceramint.2015.10.131
dc.identifier.urihttps://hdl.handle.net/20.500.14411/487
dc.identifier.volume42en_US
dc.identifier.wosWOS:000367277100052
dc.identifier.wosqualityQ1
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectron microscopyen_US
dc.subjectPowder metallurgyen_US
dc.subjectCeramicsen_US
dc.subjectX-ray scatteringen_US
dc.titlePhysical properties of the Bi<sub>1.5</sub>Zn<sub>0.92-2<i>x</i></sub>Hf<i><sub>x</sub></i>Nb<sub>1.5</sub>O<sub>6.92</sub> solid solutionsen_US
dc.typeArticleen_US
dspace.entity.typePublication
relation.isAuthorOfPublication1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isAuthorOfPublication.latestForDiscovery1138e68c-e06a-4ee2-a5ec-1dd89a3ecc2c
relation.isOrgUnitOfPublicationc3c9b34a-b165-4cd6-8959-dc25e91e206b
relation.isOrgUnitOfPublication.latestForDiscoveryc3c9b34a-b165-4cd6-8959-dc25e91e206b

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