Influence of layer on the electrical properties of Au/n-4H SiC diodes
dc.authorid | Yıldız, Dilber Esra/0000-0003-2212-199X | |
dc.authorscopusid | 57201431807 | |
dc.authorscopusid | 36766075800 | |
dc.authorscopusid | 16023635100 | |
dc.authorwosid | Yıldız, Dilber Esra/AAB-6411-2020 | |
dc.authorwosid | GULLU, HASAN HUSEYIN/F-7486-2019 | |
dc.contributor.author | Güllü, Hasan Hüseyin | |
dc.contributor.author | Gullu, Hasan H. | |
dc.contributor.author | Yildiz, Esra D. | |
dc.contributor.other | Department of Electrical & Electronics Engineering | |
dc.date.accessioned | 2024-07-05T15:27:42Z | |
dc.date.available | 2024-07-05T15:27:42Z | |
dc.date.issued | 2018 | |
dc.department | Atılım University | en_US |
dc.department-temp | [Yigiterol, Fatih; Yildiz, Esra D.] Hitit Univ, Dept Phys, TR-19030 Corum, Turkey; [Gullu, Hasan H.] Middle East Tech Univ, Cent Lab, TR-06800 Ankara, Turkey; [Gullu, Hasan H.] Middle East Tech Univ, Ctr Solar Energy Res & Applicat GUNAM, TR-06800 Ankara, Turkey; [Gullu, Hasan H.] Atilim Univ, Dept Elect & Elect Engn, TR-06830 Ankara, Turkey | en_US |
dc.description | Yıldız, Dilber Esra/0000-0003-2212-199X; | en_US |
dc.description.abstract | In this study, the effect of insulator layer on the electrical characteristics of Au/n-4H SiC diode was investigated. The current-voltage (), capacitance-voltage () and conductance-voltage () measurements were carried out at room temperature condition. Under thermionic emission model, electrical parameters as zero-bias barrier height (), ideality factor (n), interface states (), and series () and shunt () resistances were estimated from forward bias analyses. The values of n and were about 1.305 and 0.796 eV for metal-semiconductor (MS) rectifying diode, and 3.142 and 0.713 eV for metal-insulator-semiconductor (MIS) diode with the insertion of layer, respectively. Since the values of n were greater than the unity, the fabricated diodes showed non-ideal behaviour. The energy distribution profile of of the diodes was calculated by taking into account of the bias dependence of the effective barrier height () and . The obtained values with are almost one order of magnitude lower than those without for two diodes. According to Cheung's model, were calculated and these values were found in increasing behaviour with the contribution of insulator layer. In addition, the plot behaviours with linear dependence between ln() vs. indicated that the dominant conduction mechanism in the reverse bias region was Schottky effect for both MS and MIS diodes. In the room temperature measurements, different from the results of MIS diode, the values of C for MS diode was observed in decreasing behaviour from ideality with crossing the certain forward bias voltage point ( ). The decrease in the negative capacitance corresponds to the increase of G / w. | en_US |
dc.description.sponsorship | Management Unit of Scientific Research Project of Hitit University [FEF19004.15.010, FEF19002.15.001] | en_US |
dc.description.sponsorship | This study was partially supported by The Management Unit of Scientific Research Project of Hitit University, under Project Numbers FEF19004.15.010 and FEF19002.15.001. | en_US |
dc.identifier.citation | 5 | |
dc.identifier.doi | 10.1007/s12034-018-1586-2 | |
dc.identifier.issn | 0250-4707 | |
dc.identifier.issn | 0973-7669 | |
dc.identifier.issue | 3 | en_US |
dc.identifier.scopus | 2-s2.0-85047240022 | |
dc.identifier.uri | https://doi.org/10.1007/s12034-018-1586-2 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14411/2713 | |
dc.identifier.volume | 41 | en_US |
dc.identifier.wos | WOS:000432912900003 | |
dc.identifier.wosquality | Q4 | |
dc.language.iso | en | en_US |
dc.publisher | indian Acad Sciences | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | MS | en_US |
dc.subject | MIS | en_US |
dc.subject | insulator layer | en_US |
dc.subject | interface states | en_US |
dc.subject | Si3N4 layer | en_US |
dc.subject | conduction mechanism | en_US |
dc.title | Influence of layer on the electrical properties of Au/n-4H SiC diodes | en_US |
dc.type | Article | en_US |
dspace.entity.type | Publication | |
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